InAlAs=InGaAs=InP enhancement-mode high electron mobility transistors utilising Ir=Ti=Pt=Au gates have been fabricated and compared to devices with conventional Pt=Ti=Pt=Au gates. Enhancement-mode operation with threshold voltage of 134 mV was achieved for Ir-based devices with 0.25 mm gate length after a short anneal at 250 C. No change was observed in the magnitude of gm before and after anne...

For the voltage stability enhancement of power system, reactive compensation is vital important. With advancement in technology, Flexible AC Transmission System Devices (FACTS) are widely used for improvement. In primary substation, poor due to load conditions and system faults. this research, a Primary Substation using Static VAR (volt-amp reactive) compensator (SVC) presented. SVC can be impr...

The maximum loading of the transmission lines depends upon various limits. These are related to the environmental conditions, length of the line and various stability related issues. The VAR plays important role in maximising the power transfer through a transmission line. The FACTS Controllers have a major part to play in the VAR Management, in order to increase the maximum loading capability....

in methods presented to calculate the voltage collapse point, the transmission system is usually the only part of the power system that is completely modeled. distribution systems are often replaced by aggregate load models because the use of the detailed model of distribution systems in voltage stability analysis not only increases the computation time, but also decreases the probability of co...

The paper investigates on the design aspects of different SRAM cells for access time, power consumption and static noise margin. All the designs are made by using standard 90nm CMOS process. Simulations have been done for 6T, 7T, 9T and 10T SRAM cells. 10T SRAM cell shows the best SNM among all the simulated cells. 9T shows least power and least access time. 6T cells stability limits the potent...

InGaP/InGaAs doped-channel direct-coupled field-effect transistor logic (DCFL) with relatively low supple voltage is demonstrated by two-dimensional analysis. In the integrated enhancement/depletion-mode transistors, subband and two-dimensional electron gas (2DEG) are formed in the InGaAs strain channels, which substantially increase the channel concentration and decrease the drain-to-source sa...

The explosive growth of battery operated devices has made low-power design a priority in recent years. Moreover, embedded SRAM units have become an important block in modern SoCs. The increasing number of transistor count in the SRAM units and the surging leakage current of the MOS transistors in the scaled technologies have made the SRAM unit a power hungry block from both dynamic and static p...

The requirement for minimized cost whilst preserving power system reliability necessitates the development of both efficient system security assessment approaches and appropriate emergency remedial actions. Load shedding is a type of corrective actions that is applied to save power system stability against severe disturbances. This paper proposes an optimal load shedding policy that takes into ...