نتایج جستجو برای: two diode circuit model
تعداد نتایج: 4172963 فیلتر نتایج به سال:
The analysis and optimization of the npvnp avalanche diode have been realized on basis of the nonlinear model and special optimization procedure. This type of the diode that was named as Double Avalanche Region (DAR) IMPATT diode includes two avalanche regions inside the diode. The phase delay which was produced by means of the two avalanche regions and the drift region v is sufficient to obtai...
Abstract We investigate the heat transport properties of a three-level system coupled to three thermal baths, assuming model based on superconducting circuit implementations. The system-bath coupling is mediated by resonators which serve as frequency filters for different qutrit transitions. Taking into account finite quality factors resonators, we find rectification and circulation effects not...
Present article deals with analysis of output characteristics in ZnO based Dye Sensitised Solar Cell (DSSC) using a Lambert W-function technique and MATLAB Simulation. We have used an analytical approach having no approximation for extracting various parameters of DSSC, a well known Lambert W-function technique. The model used in present work is single diode model including the capacitance in e...
Knowing patient exact dose during radiological activities is considered as one of the main principles to decrease radiation-induced dangers which are not really necessary and affect a great deal of people. In this respect, in recent years many extensive studies have been done on types of photodiodes and production of X-ray detectors using semiconductor elements. Since these elements are not ver...
Features u Automatic component identification ⇒ Bipolar transistor, with or without protection diode and/or B-E shunt resistor ⇒ Darlington transistors ⇒ Enhancement mode MOSFETs ⇒ Junction FETs ⇒ Triac ⇒ Thyristors ⇒ Diodes ⇒ Unijunction transistors u Automatic pinout identification for all the above components u Gain measurement for bipolar transistors u Test current display u VBE/IB measurem...
This study proposes a calculation methodology that determines the optimal boundary parameters of single-diode photovoltaic model. It allows model when no reference parameter boundaries are available. The differential evolution algorithm, integrated with step-by-step definition module, is used to calculate model, improving performance classic algorithm compared other studies. solution validated ...
Juhn Suk Yoo Hojin Lee Jerzy Kanicki Chang-Dong Kim In-Jae Chung Abstract — A novel pixel circuit for electrically stable AMOLEDs with an a-Si:H TFT backplane and top-anode organic light-emitting diode is reported. The proposed pixel circuit is composed of five a-Si:H TFTs, and it does not require any complicated drive ICs. The OLED current compensation for drive TFT threshold voltage variation...
Abstract: Many diode-based equivalent circuits for simulating the electrical behaviour of photovoltaic (PV) cells and panels are reported in the scientific literature. Two-diode equivalent circuits, which require more complex procedures to calculate the seven model parameters, are less numerous. The model parameters are generally calculated using the data extracted from the datasheets issued by...
A hybrid sensor and display pixel and its operating scheme are proposed. The circuit consists of two main parts: 1) the light sensor and 2) the integrated display onto the backplane. Hybrid a-Si:H/Nanocrystalline silicon (nc-Si) TFTs were used as a hybrid phototransistor incorporating both sensing and switching on the same device. The display backplane design was implemented using a driving TFT...
This paper presents a new type diode connected MOS transistor to improve CMOS conventional rectifier's performance in RF energy harvester systems for wireless sensor networks in which the circuits are designed in 0.18 μm TSMC CMOS technology. The proposed diode connected MOS transistor uses a new bulk connection which leads to reduction in the threshold voltage and leakage current; therefore, ...
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