The presence of a deformation or hump in the subthreshold region of the transfer characteristic of Amorphous Oxide Semiconductor (AOS) Thin-Film Transistors (TFTs) has been observed after DC stress and related to different causes. In previous works, it has been shown that in devices with active-layer thickness greater than 120 nm, a region with relatively high conductivity remains near the back...

We investigate the origin of undesirable transverse cracks often observed in thin films obtained by the layer transfer technique. During this process, two crystals bonded to each other containing a weak plan produced by ion implantation are heated to let a thin layer of one of the material on the other. The level of stress imposed on the film during the heating phase due to the mismatch of ther...

X-ray photoelectron spectroscopy (XPS) and medium energy ion scattering (MEIS) are used to determine chemical bonding and composition of ultra-thin films of mixed yttrium, silicon, and oxygen, formed by oxidation of metal on clean and pre-treated silicon. XPS and MEIS analyses indicate that oxidation of yttrium on bare silicon results in a fully oxidized film with a significant fraction of Y-O-...

The working principle of scanning acoustic microscope (SAM) is introduced, and the acoustic transmission action is analyzed according to the geometrical and structural characteristics of explosive/Aluminum-alloy binding. The adhesive status of the interface in some typical parts of the binding is detected by SAM and 30MHz ultrasonic focal field lens. The results show that the interfaces between...

See also: II/Chromatography: Paper Chromatography. Chromatography: Gas: Detectors: Selective; Gas Chromatography}Mass Spectrometry. Chromatography: Liquid: Detectors: Mass Spectrometry. Chromatography: Thin-Layer (Planar): Densitometry and Image Analysis; Layers; Mass Spectrometry; Modes of Development: Conventional; Modes of Developement: Forced Flow, Over Pressured Layer Chromatography and Ce...

The transport properties of metallophthalocyanine thin films are important ingredients in many technological applications. Ohmic conductance of thin film (15 nm to 90 nm) Co-phthalocyanine (CoPc) capacitive devices has been investigated in the temperature range of 40 K to 300 K. For Pd and V electrodes, the electrode-film (E-F) interface and metallic micro-shorts contribute substantially to the...

Diagnosing of the interface quality and the interactions between insulators and semiconductors is significant to achieve the high performance of nanodevices. Herein, low-frequency noise (LFN) in mechanically exfoliated multilayer molybdenum disulfide (MoS2) (~11.3 nm-thick) field-effect transistors with back-gate control was characterized with and without an Al2O3 high-k passivation layer. The ...

We describe several transinterface electron-transfer processes occurring at the benzonitrile (PhCN)/water interface that produce excited states. When an electrode was moved very close to the interface or even through the interface to produce an electrode/thin layer organic phase/aqueous solution configuration, the electrogenerated radical species formed in the PhCN phase (C12-Ru(bpy)3, DPA+, or...

Abstract: titanium sheets in pure molten aluminum at 750 and X-Ray Diffraction Analysis results, TiAlintermetallic layer thickness increases slowly at primary stages. After that an enhanced growth rate occurs due to layercracking and disruption. Presumably, reaction starts with solving titanium into the molten aluminum causing intitanium super saturation and TiAlintermetallic layer which conseq...