In recent years, graphene studies have increased rapidly. Graphene oxide, which is an intermediate product to form graphene, is insulating, and it should be thermally reduced to be electrically conductive. We herein describe an attempt to make use of the insulating properties of graphene oxide. The graphene oxide layers are deposited onto Si substrates, and a metal-insulator-semiconductor tunne...

MAX-phases are of increasing interest as coating material for high temperature applications due to their unique metallic well ceramic properties. Herein, the deposition Cr2AlC and Ti3AlC2 or Ti2AlC MAX-phase forming coatings by magnetron sputtering is demonstrated. Using pure elemental targets, manufacturing with a thickness above 7 μm established. The characterized high-temperature X-ray diffr...

Gallium oxide (?-Ga2O3) is emerging as a promising wide-bandgap semiconductor for optoelectronic and high-power electronic devices. In this study, deep-level defects were investigated in pulsed-laser-deposited epitaxial films of ?-Ga2O3. A deep ultraviolet photodetector (DUV) fabricated on ?-Ga2O3 film showed slow decay time 1.58 s after switching off 250 nm wavelength illumination. Generally, ...

We report the electrical properties of Al0.3Ga0.7N/GaN heterojunction field effect transistor (HFET) structures with a Ga2O3 passivation layer grown by metal–organic chemical vapor deposition (MOCVD). In this study, three different thicknesses β-Ga2O3 dielectric layers were on leading to metal-oxide-semiconductor-HFET or MOSHFET structures. X-ray diffraction (XRD) showed (2¯01) orientation peak...

Cu-based electrodes could advance solid oxide fuel cells (SOFC) technology due to good electric conductivity and relatively high electrochemical activity among transition metals. However, one of the main challenges for designing anode materials is thermal stability in SOFC operation condition. Herein, a promising material decorated with Cu nanoparticles (NPs) was synthesized via in-situ exsolut...

Integrated Al2O3:Er 3+ channel waveguide ring lasers were realized on thermally oxidized silicon substrates. High pump power coupling intoand low output power coupling fromthe ring is achieved in a straightforward design. Wavelength selection in the range 1532 to 1557 nm was demonstrated by varying the length of the output coupler from the ring. Keywords—waveguide laser; ring laser; erbium-dope...