The hot-wall metal-organic chemical vapor deposition (MOCVD), previously shown to enable superior III-nitride material quality and high performance devices, has been explored for Mg doping of GaN. We have investigated the incorporation in a wide range ([Formula: see text] cm −3 up [Formula: ) demonstrate GaN:Mg with low background impurity concentrations under optimized growth conditions. Dopan...

Gallium oxide (Ga 2 O 3 ) is a highly promising ultrawide‐bandgap semiconductor for power electronics that emerged about decade ago. Epitaxial growth Ga at the small scale demonstrated. In order to develop scalable manufacturing of high‐performance epitaxial structures, in‐depth understanding fundamental processes, control parameters, and mechanism imperative. This review discusses recent progr...

These are model studies whose aim is to obtain information that would allow development of new technology for synthesizing monolayers of Al2O3-C with adjusted microstructure on cemented carbides. The Al2O3-C layer will constitute an intermediate layer on which the outer layer of Al2O3 without carbon is synthesized. The purpose of the intermediate layer is to block the cobalt diffusion to the sy...

Thin films of hexagonal boron nitride carbon, h-(BN)1 x(C2)x, alloys in the C-rich side have been synthesized by metal-organic chemical vapor deposition (MOCVD) on c-plane sapphire substrates. X-ray diffraction measurements confirmed single hexagonal phase of h-(BN)1 x(C2)x epilayers. Electrical transport and Raman spectroscopy measurements results revealed evidences that homogenous h-(BN)1 x(C...

Boron-doped zinc oxide (BZO) films, deposited by metal-organic chemical vapor deposition (MOCVD), have been widely used as front electrodes in thin-film solar cells due to their native pyramidal surface structure, which results in efficient light trapping. This light trapping effect can enhance the short-circuit current density (Jsc) of solar cells. However, nanocracks or voids in the silicon a...

Abstract AlScN/GaN epitaxial heterostructures have raised much interest in recent years, because of the high potential such structures for high-frequency and high-power electronic applications. Compared to conventional AlGaN/GaN heterostructures, spontaneous piezoelectric polarization AlScN can yield a five-time increase sheet carrier density two-dimensional electron gas formed at heterointerfa...