نتایج جستجو برای: stable power swing
تعداد نتایج: 740603 فیلتر نتایج به سال:
AbstructA novel BiCMOS full-swing circuit technique with superior performance over CMOS down to 1.5 V is proposed. A conventional noncomplementary BiCMOS process is used. The proposed pull-up configuration is based on a capacitively coupled feedback circuit. Several pull-down options were examined and compared, and the results are reported. Several cells were implemented using the novel circuit...
There is continuous variation in amplitude, phase, and frequency of voltage current signals during power swing a system. Such makes the memorized prefault data less accurate to be used as nonfault component while computing superimposed quantity for protection decisions swing. In this article, signal characteristics are analyzed technique proposed obtain correct components computation. The accur...
This study integrates a MOS varactor into one of feedback capacitors in the half circuit of a balanced Colpitts VCO. This leads to significant increase of the negative resistance of the balanced Colpitts VCO, thereby ensuring stable start-up of oscillation even at the sub-1-V supply voltage and causing further signal swing in the tank.
The bandwidth of global on-chip interconnects in modern CMOS processes is limited by their high resistance and capacitance [1]. Repeaters that are used to speed up these interconnects consume a considerable amount of power [2] and area. Recently published techniques [1-4] increase the achievable data rate at the cost of high static power consumption, leading to relatively high energy per bit fo...
Quadruped robots have unique capabilities for motion over uneven natural environments. This article presents a stable gait for a quadruped robot in such motions and discusses the inverse-dynamics control scheme to follow the planned gait. First, an explicit dynamics model will be developed using a novel constraint elimination method for an 18-DOF quadruped robot. Thereafter, an inverse-dynamics...
This paper is the first study on the impact of ambient temperature on the electrical characteristics and high frequency performances of double gate armchair graphene nanoribbon field effect transistor (GNRFET). The results illustrate that the GNRFET under high temperature (HT-GNRFET) has the highest cut-off frequency, lowest sub-threshold swing, lowest intrinsic delay and power delay product co...
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