A high voltage pulsed discharge device which can produce intense high energy electron beam named “pseudospark” is presented in this work. This discharge device is able to hold 10s of kV voltage, kA current and 10 10 -10 11 A/s current rising rate. The pseudospark device is also a simply-constructed source for intense electron beam with high energy. The presented experimental investigation is fo...

Bolometric Response of Superconducting Microbridges and Single-Walled Carbon Nanotubes Daniel Ferguson Santavicca 2009 A bolometer is a device that uses a temperature-dependent resistance to detect power. The strongly temperature-dependent resistance of a superconductor biased on its superconducting phase transition can be used to make an extremely sensitive bolometric detector. We have develop...

In the present work, Dual Material Gate (DMG) AlGaN/GaN High Electron Mobility Transistor (HEMT) has been studied for its improved linearity performance on the basis of VIP3 (i.e. extrapolated input voltage at which the first and third order harmonic voltages are equal) and compared with the conventional Single Material Gate (SMG) AlGaN/GaN HEMT. The influence of the device parameters such as t...

We demonstrate for the first time that a single-crystalline epitaxial MgxCa1-xO film can be deposited on gallium nitride (GaN) by atomic layer deposition (ALD). By adjusting the ratio between the amounts of Mg and Ca in the film, a lattice matched MgxCa1-xO/GaN(0001) interface can be achieved with low interfacial defect density. High-resolution X-ray diffraction (XRD) shows that the lattice par...