Oxidized macroporous silicon structures with CdS surface nanocrystals have been proposed to enhance the photoluminescence of CdS nanoparticles due to reducing the electron recombination outside the nanoparticle layer. It has been found that the resonance electron scattering on the Si–SiO2 interface for samples with low concentration of Si–O–Si states transforms into scattering on ionized surfac...

The fundamental connection between electron stimulated desorption ~ESD! of hydrogen ~H!/ deuterium ~D! at silicon surfaces in ultrahigh vacuum and hot-carrier-stimulated desorption of H/D at the oxide/silicon interfaces in complementary metal–oxide–semiconductor ~CMOS! devices is presented. The dependences of device degradation on carrier energy and current density were studied on two generatio...

A high Q-factor (quality-factor) spiral inductor fabricated by the CMOS (complementary metal oxide semiconductor) process and a post-process was investigated. The spiral inductor is manufactured on a silicon substrate. A post-process is used to remove the underlying silicon substrate in order to reduce the substrate loss and to enhance the Q-factor of the inductor. The post-process adopts RIE (...

Silicon and graphene are promising anode materials for lithium-ion batteries because of their high theoretical capacity; however, low volumetric energy density, poor efficiency and instability in high loading electrodes limit their practical application. Here we report a large area (approximately 15 cm × 2.5 cm) self-standing anode material consisting of molecular precursor-derived silicon oxyc...

Tantalum (Ta) oxide, due to its high-temperature capabilities and thermal expansion coefficient similar to silicon nitride, is a promising candidate for environmental barriers for silicon (Si) nitride-based ceramics. This paper focuses on the development of plasma-sprayed Ta oxide as an environmental barrier coating for silicon nitride. Using a D-optimal design of experiments, plasma-spray proc...

We report the observation of enhanced oxidation on silicon and porous silicon samples exposed in air ambient to high-dose-rate 10 keV x-ray radiation at room temperature. The evolution of the radiation-induced oxide growth is monitored by ellipsometry and interferometric reflectance spectroscopy. Fourier transform infrared FTIR spectroscopy shows the emergence of Si–O–Si stretching modes and co...

GaAs nanowire arrays on silicon offer great perspectives in the optoelectronics and solar cell industry. To fulfill this potential, gold-free growth in predetermined positions should be achieved. Ga-assisted growth of GaAs nanowires in the form of array has been shown to be challenging and difficult to reproduce. In this work, we provide some of the key elements for obtaining a high yield of Ga...

In silicon surface micromachining, anhydrous HF GPE process was verified as a very effective method for the dry release of microstructures. The developed gas-phase etching (GPE) process with anhydrous hydrogen fluoride (HF) gas and alcoholic vapor such as methanol, isopropyl alcohol (IPA) was characterized and its selective etching properties were discussed. The structural layers are P-doped mu...

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