The atomic structure and elastic properties of silicon carbide nanowires of different shapes and effective sizes were studied using density functional theory and classical molecular mechanics. Upon surface relaxation, surface reconstruction led to the splitting of the wire geometry, forming both hexagonal (surface) and cubic phases (bulk). The behavior of the pristine SiC wires under compressio...

Silicon nanowires are patterned down to 30 nm using complementary metal-oxide-semiconductor (CMOS) compatible process. The electrical conductivities of n-/p-leg nanowires are extracted with the variation of width. Using this structure, Seebeck coefficients are measured. The obtained maximum Seebeck coefficient values are 122 μV/K for p-leg and -94 μV/K for n-leg. The maximum attainable power fa...

Silicon nanowires have been patterned with mean widths down to 4 nm using top-down lithography and dry etching. Performance-limiting scattering processes have been measured directly which provide new insight into the electronic conduction mechanisms within the nanowires. Results demonstrate a transition from 3-dimensional (3D) to 2D and then 1D as the nanowire mean widths are reduced from 12 to...

Impurity-free silicon oxide nanowires were synthesized on a 3 cm x 3 cm alumina plate uniformly by thermal evaporation of a mixture of powder of graphite powders and SiOx@Si core-shell particles under argon atmosphere with a flow rate of 50 sccm at 1100 C for 3 hours. The assynthesized products characterized by field-emission scanning electron microscopy, field-emission transmission electron mi...

We report on a gas phase process to synthesize and integrate seed particles and inorganic nanowires with control over location, diameter, length, and geometrical orientation. The process flow begins with the gas phase synthesis and size selection of nanoparticle seeds. The seed particles are deposited onto addressable locations on a substrate by Coulomb force and fringing field directed assembl...

Nanotubes, nanowires and nanobelts are important one-dimensional (1D) nanomaterials that are the foundation for nanoscience and nanotechnology (Fig. 1a). 1D nanomaterials have important applications in electronics, optoelectronics, sensors, biomedical science, environmental science, green energy and advanced defence technologies. This themed issue on inorganic 1D nanomaterials gathers papers ab...

The relationship between crystal quality and the properties of indium phosphide nanowires grown on silicon (111) has been studied by transmission electron microscopy, photoluminescence spectroscopy, and photoelectrochemistry. Wires with no defects and with {111} twin boundaries parallel and perpendicular to the growth direction were obtained by metalorganic vapor-phase epitaxy using liquid indi...

InSb nanowires with high crystalline properties are synthesized with a diameter of 200 nm via direct current electrodeposition method inside the nanochannels of anodic alumina membranes. For the first time, the characteristics of field effect transistors based on InSb nanowires synthesized via electrochemistry is presented. A single InSb nanowire is used as a channel with gold source and drain ...

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a r t i c l e i n f o The composite film of carbon nanotubes and silicon carbide nanowires was synthesized directly on the silicon substrate by the catalyst-assisted method. The carbon nanotubes crimped together decorated with silicon carbide nanowires covering the whole substrate. The appropriate amount of aluminum powders is a crucial factor to achieve the composite film. The composite film e...