One of the most common forms of cohesive failure observed in brittle thin films subjected to a tensile residual stress is channel cracking, a fracture mode in which through-film cracks propagate in the film. The crack growth rate depends on intrinsic film properties, residual stress, the presence of reactive species in the environment, and the precise film stack. In this paper, we investigate t...

In this work, the design, fabrication process and theoretical characterization of an XYZ gap-closing microstage actuator based on a simple, two-mask silicon-on-insulator (SOI) process is presented. An aluminum thin film is selectively deposited on the serpentine supporting springs of the actuator forming a bimorph structure. The lattice mismatch between silicon and the aluminum film introduces ...

This paper presents a quantitative method to determine the profile of the residual stress through the depth nf a highly boren-depod silicon film. First, the stress profile relative to the stress at the neutral surface of the film is determines by least-square estimation using the measured vertical deflection of p+ silicon cantilevers with different etch depths. Secondly, the average of the resi...

Electron mobility in extremely thin-film siliconon-insulator (SOI) MOSFET’s has been simulated. A quantum mechanical calculation is implemented to evaluate the spatial and energy distribution of the electrons. Once the electron distribution is known, the effect of a drift electric field parallel to the Si–SiO2 interfaces is considered. The Boltzmann transport equation is solved by the Monte Car...

We propose an approach for enhancing the absorption of thin-film amorphous silicon solar cells using periodic arrangements of resonant dielectric nanospheres deposited as a continuous film on top of a thin planar cell. We numerically demonstrate this enhancement using 3D full field finite difference time domain simulations and 3D finite element device physics simulations of a nanosphere array a...

Colloidal semiconductor nanocrystals have attracted attention for cost-effective, solution-based deposition of quantum-confined thin films for optoelectronics. However, two significant challenges must be addressed before practical nanocrystal-based devices can be realized. The first is coping with the ligands that terminate the nanocrystal surfaces. Though ligands provide the colloidal stabilit...

We use a soft templating approach in combination with evaporation induced self-assembly to prepare mesoporous films containing cylindrical pores with elliptical cross-section on an ordered pore lattice. The film is deposited on silicon-based commercial atomic force microscope (AFM) cantilevers using dip coating. This bilayer cantilever is mounted in a humidity controlled AFM, and its deflection...

In this paper, we describe a method of amorphous silicon carbide film formation for a solar cell passivation layer. The film was deposited on p-type silicon (100) and glass substrates by an RF magnetron co-sputtering system using a Si target and a C target at a room-temperature condition. Several different SiC [Si1-xCx] film compositions were achieved by controlling the Si target power with a f...

A ZIF-8 thin film-based Fabry-Pérot device has been fabricated as a selective sensor for chemical vapors and gases. The preparation of the ZIF-8 thin film and a series of ZIF-8 thin films of various thicknesses grown on silicon substrates are presented.

This paper reports the cross-plane thermal conductivity of ordered mesoporous nanocrystalline silicon thin films between 25 and 315 K. The films were produced by evaporation-induced self-assembly of mesoporous silica followed by magnesium reduction. The periodic ordering of pores in mesoporous silicon was characterized by X-ray diffraction and direct SEM imaging. The average crystallite size, p...