The ability to selectively chemically functionalize silicon nitride (Si3N4) or silicon dioxide (SiO2) surfaces after cleaning would open interesting technological applications. In order to achieve this goal, the chemical composition of surfaces needs to be carefully characterized so that target chemical reactions can proceed on only one surface at a time. While wet-chemically cleaned silicon di...

We report the effect of N2 addition to C4F8 and C4F8 /Ar discharges on plasma etching rates of organosilicate glass ~OSG! and etch stop layer materials (Si3N4 and SiC!, and the results of surface chemistry studies performed in parallel. N2 addition exhibits different effects in C4F8 and C4F8 /Ar plasmas, which may be explained by a higher plasma density, electron temperature, and possibly, the ...

Si3N4/TaC composite MAO coatings were fabricated by microarc oxidation (MAO) on a Ti–6Al–4V (TC4) alloy in phosphate-based electrolyte containing mixed particles. The influence of the amount particles microstructure, composition, tribological behavior, and corrosion properties has been investigated. Morphological research was carried out using scanning electron microscopy (SEM), with surface po...

Our previous constitutive model for fully dense ceramics has been extended to include A1203 (AD999) and Si3N4; there are now parameters for seven materials. New experimental data, such as spall and double-shock wave-profiles for SiC and B4C, have been successfully simulated. Additional experiments are proposed which should help elucidate the remaining problems.

Density functional theory has been applied to a study of the electronic structure of the ideally-terminated, relaxed and H-saturated (0001) surfaces of b-Si3N4 and to that of the bulk material. For the bulk, the lattice constants and atom positions and the valence band density of states are all in good agreement with experimental results. A band gap of 6.7 eV is found which is in fair accord wi...

In this abstract we report on the design of a low energy consumption CMOS-compatible FranzKeldysh effect plasmonic modulator. The main characteristics of the modulator were determined using integrated electro-optical simulations. A 3.3 dB extinction ratio for a 30 μm long modulator was demonstrated under 3 V bias voltage at an operation wavelength of 1647 nm. The estimated energy consumption wa...