Abstract – In this paper an Improved Zero Voltage Zero Current Pulse Width Modulation Forward converter which employs a simple resonance snubber circuit is introduced. A simple snubber circuit consists of a capacitor, an inductor and two diodes. In proposed converter, switch Q1 operates at ZCS turn-on, and ZVS turn-off conditions and all-passive semiconductor devices operate at ZVZCS turn-on an...

A multilevel inverter is a power electronic device made to synthesize a desired AC voltage from several levels of DC voltages. Some industrial drives require medium voltage and megawatt power level. For a medium voltage grid, it is troublesome to connect only one power semiconductor switch directly. A multilevel power converter structure has been introduced as an alternative in high power and m...

The polarization of conduction electron spins due to an electrical current is observed in strained nonmagnetic semiconductors using static and time-resolved Faraday rotation. The density, lifetime, and orientation rate of the electrically polarized spins are characterized by a combination of optical and electrical methods. In addition, the dynamics of the current-induced spins are investigated ...

This paper outlines the method of constructing singleelectron logic circuits based on the binary decision diagram (BDD), a graphical representation of digital functions. The circuit consists of many unit devices, BDD devices, cascaded to build the tree of a BDD graph. Each BDD device corresponds to a node of the BDD graph and operates as a two-way switch for the transport of a single electron. ...

We present an experimental approach to study the ultrafast polarization switching dynamics in thin-film ferroelectrics. A semiconductor photoconductive switch with femtosecond laser illumination is used as a ‘‘pulse generator’’ to produce jitter-free, sub-100 ps rise time step-function-like electrical pulses. Quantitative measurements yield a polarization switching time, ts , of ;220 ps when me...

We demonstrate a spin diode consisting of a semiconductor-free nanoscale Fe/MgO-based double tunnel junction. The device exhibits a near perfect spin-valve effect combined with a strong diode effect. The mechanism consistent with our data is resonant tunneling through discrete states in the middle ferromagnetic layer sandwiched by tunnel barriers of different spin-dependent transparency. The ob...

A novel reprogrammable optical phase array (ROPA) device is presented as a reconfigurable electro-optic element. One specific application of the ROPA, a 1 x 6 electro-optic space switch, is fully described. Switching angles are within 2 degrees , and switching is achieved through a complementary metal-oxide semiconductor (CMOS) controlled, diffraction based, optical phase array in a bulk BaTiO3...

In order to improve mixed optical-electrical microwave devices design, a novel modeling of opto-electronic phenomena as photoconduction effect has been achieved. Multiples photo-induced carriers generations/recombinations processes playing a part in semiconductor subtrates under laser illumination are taken into account and modeled by an equivalent electrical circuit. Various types of modulatio...

Since the mid-nineteen seventies the “enhancement-mode” MOSFET has been the subject of almost continuous global research, development, and refinement by both the semiconductor industry and academia. As a result it has become the predominant MOSFET topology that encompasses discrete MOS power switches and CMOS. By contrast, the depletion-mode MOSFET has not received the same attention or popular...

High-speed operation of free-space optical interconnect for a three-dimensional optoelectronic crossbar switching has been analyzed. System architecture, transmitter and receiver design are presented. The effect of ghost talk caused by the superposition of the delayed reflections of the original signal due to the multiple propagation of the wave between the vertical-cavity surface-emitting lase...