We present the development of a monolithically integratable optical isolator. The device is a semiconductor optical amplifier with magnetized ferromagnetic metal contact. 12.7dB isolation and optical transparency are demonstrated. The spectral dependence is studied. ©2005 Optical Society of America OCIS codes: (230.3240) Isolators; (250.5980) Semiconductor optical amplifiers; (230.3810) Magneto...

Abstract We demonstrate heterogeneous integration of active semiconductor materials into the conventional passive metal-insulator-metal (MIM) waveguides to provide compact on-chip light generation and detection capabilities for chip-scale nanophotonic platforms. Depending on its bias conditions, a metal-semiconductor-metal section can function as either emitting diode or photodetector directly ...

The Extraordinary Magnetoresistance (EMR) effect is a change in the resistance of a device upon the application of a magnetic field in hybrid structures, consisting of a semiconductor and a metal. The underlying principle of this phenomenon is a change of the current path in the hybrid structure upon application of a magnetic field, due to the Lorentz force. Specifically, the ratio of current, ...

This work investigates the channel thickness dependency of high-k gate dielectric-based complementary metal-oxide-semiconductor (CMOS) inverter circuit built using a conventional double-gate metal gate oxide semiconductor field-effect transistor (DG-MOSFET). It is espied that the use of high-k dielectric as a gate oxide in n/p DG-MOSFET based CMOS inverter results in a high noise margin as well...

Geometry-induced doping (G-doping) has been realized in semiconductors nanograting layers. G-doping-based p-p(v) junction fabricated and demonstrated with extremely low forward voltage reduced reverse current. The formation mechanism of proposed. To obtain G-doping, the surfaces p-type p+-type silicon substrates were patterned indents depth d = 30 nm. Ti/Ag contacts deposited on top G-doped lay...