Combining optical injection and polarization-rotated optical feedback in a semiconductor laser can induce selfreferenced periodic output that is widely tunable by simply varying the dc-bias points of the master and slave lasers. We observed feedback-induced reduction of the pulsation peak linewidth by more than two orders of magnitude relative to the injection-only case. The nonlinear dynamics ...

the absorption properties of charge transfer organic semiconductor ttf-tcnq (tetrathiafulvalene-tetracyanoquhodimete ) filmsdeposited on kbr singlecrystal, quartz and glass substrates in far infrared have been investigated. an absorption edge at ?10 ??m was observed. photoconductivity, photoconduction efficiency and gain and photocarrier's lifetime have been measured. the results show an e...

Coherent Doppler Lidars (CDLs), operating at an eye-safe 1.5-micron wavelength, have found promising applications in the optimization of wind-power production. To meet the wind-energy sector's impending demand for more cost-efficient industrial sensors, we have focused on the development of continuous-wave CDL systems using compact, inexpensive semiconductor laser (SL) sources. As a preliminary...

ZnSe and other zinc chalcogenide semiconductor materials can be doped with divalent transition metal ions to create a mid-IR laser gain medium with active function in the wavelength range 2 – 5 microns and potentially beyond using frequency conversion. As a step towards fiberized laser devices, we have manufactured ZnSe semiconductor fiber waveguides with low (less than 1dB/cm at 1550nm) optica...

We discuss subwavelength-scale semiconductor metal-optic resonators placed on the metal substrate with various top metal plate sizes. Albeit with large optical losses, addition of metal layers converts a leaky semiconductor nano-block into a highly-confined optical cavity. Optically pumped lasing action is observed with the extended top metal layer that can significantly suppress the radiation ...

The authors present the design and performance of a low threshold selectively oxidized Vertical Cavity Surface Emitting Laser (VCSEL) fabricated for operation at a wavelength of 1.55μm. The device is based on III-V quaternary semiconductor alloys and is grown by Molecular Beam Epitaxy technique. The theoretical investigation of the optical properties of the compound semiconductor alloys allows ...