A diode-pumped Yb>(3+):Ca(4)GdO(BO>(3))(3) (Yb:GdCOB) laser generating 90-fs pulses at a center wavelength of 1045 nm is demonstrated. This is, to our knowledge, the shortest pulse duration obtained from an ytterbium laser with a crystalline host. This laser is mode locked with a high-finesse semiconductor saturable-absorber mirror and emits 40 mW of average power at a repetition rate of 100 MHz.

Fifth generation ethylendiamine-core poly(amidoamine) (PAMAM G5) is presented as an efficient capping agent for the preparation of metal and semiconductor nanoparticles by ps laser ablation in water. In particular, we describe results obtained with the fundamental, second and third harmonic of a ps Nd:YAG laser and the influence of laser wavelength and pulse energy on gold particle production a...

A new technique of dual-frequency Doppler-lidar measurement is investigated. This technique is based on the use of a coherently locked, tunable, dual-frequency laser source and is shown to accurately measure velocities as small as 26 mum/s. It is generated by exploiting the nonlinear dynamics of a semiconductor laser through a proper combination of optical injection and operating conditions.

A relatively inexpensive and versatile degenerate four-wave mixing setup is described utilizing a nitrogen laser pumped dye laser. Samples can be screened rapidly, which is demonstrated with the example of a semiconductor doped glass having a nonlinear susceptibility x((3)) ~ 10(-11)-10(-10) esu.

In this letter, a passive microring-resonator-coupled semiconductor laser structure is proposed. The weakly coupled high-Q microring resonator provides a strong mode-selection filter and could considerably extend the effective cavity length of a conventional Fabry–Perot laser. The side-mode suppression ratio, the linewidth and the frequency chirp of this laser are dramatically improved comparin...

An integrated tunable C band laser fabricated in a commercial CMOS foundry is discussed. The laser is embedded in the silicon chip, and is hermetically sealed. Preliminary optical characterization results are presented. OCIS codes: (250.5960) Semiconductor Lasers; (250.5300) Photonic Integrated Circuits; (140.3600) Lasers, tunable

In this Letter, we report the tuning of the emission wavelength of a single mode distributed feedback quantum cascade laser by modifying the mode effective refractive index using fluids. A fabrication procedure to encapsulate the devices in polymers for microfluidic delivery is also presented. The integration of microfluidics with semiconductor laser (optofluidics) is promising for new compact ...

We compare the temperature dependent characteristics of multiple quantum well semiconductor laser diodes and light emitting diodes operating at a wavelength, /z = 1.3 ,um. No model in which Auger recombination is the dominant temperature sensitive parameter can explain our experimental observations. We suggest that net gain is the appropriate temperature dependent variable which determines lase...

This research carries out coherence measurements of a 42.7 GHz quantum dash (QDash) semiconductor laser when passively, electrically, and optically mode-locked. Coherence of the spectral lines from the mode-locked laser is determined by examining the radio frequency beat-tone linewidth as the mode spacing is increased up to 1.1 THz. Electric-field measurements of the QDash laser are also presen...

We report on the generation of multi-wavelength dissipative soliton (DS) in an all normal dispersion fiber laser passively mode-locked with a semiconductor saturable absorber mirror (SESAM). We show that depending on the strength of the cavity birefringence, stable single-, dual- and triple-wavelength DSs can be formed in the laser. The multi-wavelength soliton operation of the laser was experi...