نتایج جستجو برای: semiconductor junction

تعداد نتایج: 110404  

2008
Fabrice David John Giles

Conventionally, the cold fusion reaction produces heat. (1),(2) The authors have sought a different approach, wherein the device has no input energy, relying on the energy produced by cold fusion in the device. The device consists of diodes fabricated as powder, with a large surface junction made up of a semiconductor in contact with palladium charged with deuterium. The apparent fusion reactio...

2013
D. Mendoza

Synthesis of multilayer graphene on copper wires by a chemical vapor deposition method is reported. After copper etching, the multilayer tube collapses forming stripes of graphitic films, their electrical conductance as a function of temperature indicate a semiconductor-like behavior. Using the multilayer graphene stripes, a cross junction is built and owing to its electrical behavior we propos...

2004

The principles and applications of semiconductor electrodes in photoelectrochemical cells (liquid junction photovoltaic, photoelectrosynthetic, and photocatalytic) are described. The extension of the principles of these cells to the design of simple particle systems for carrying out light-driven chemical reactions is discussed. [The SCI indicates that this paper has been cited in more than 245 ...

2015
Michael F. Lichterman Shu Hu Matthias H. Richter Ethan J. Crumlin Stephanus Axnanda Marco Favaro Walter Drisdell Zahid Hussain Thomas Mayer Bruce S. Brunschwig Nathan S. Lewis Zhi Liu Hans-Joachim Lewerenz

Energy Environ. Sci., 2015, 8, 2409--2416 | 2409 Cite this: Energy Environ. Sci., 2015, 8, 2409 Direct observation of the energetics at a semiconductor/liquid junction by operando X-ray photoelectron spectroscopy† Michael F. Lichterman,‡ Shu Hu,‡ Matthias H. Richter,‡ Ethan J. Crumlin,‡ Stephanus Axnanda, Marco Favaro, Walter Drisdell, Zahid Hussain, Thomas Mayer, Bruce S. Brunschwig,* Nathan S...

2004
Bernd Kästner D. A. Williams

A technology is reviewed which allows one to produce quasi-lateral 2D electron and hole gas junctions of arbitrary shape. It may be implemented in a variety of semiconductor heterostructures. Here we concentrate on its realization in the GaAs/AlGaAs material system and discuss the possibility to use this structure for optical spin detection in low-dimensional systems.

2004
Antonio R. de C. Romaguera Mauro M. Doria

A vortex line passes through as many pinning centers as possible on its way from one extremety of the superconductor to the other at the expense of increasing its self-energy. In the framework of the Ginzburg-Landau theory we study the relative growth in length, with respect to the straight line, of a vortex near a zigzag of defects. The defects are insulating pinning spheres that form a three-...

Journal: :Physical review 2023

Coherent tunneling processes of multiple Cooper pairs across a Josephson junction give rise to higher harmonics in the current phase relation. In this work, we propose and study junctions based on semiconductor-superconductor-ferromagnetic insulator heterostructures engineer nonsinusoidal current-phase relations. The gate-tunability charge carriers density semiconductor, together with adjustabl...

Journal: :Microelectronics Reliability 2007
M. Holz G. Hultsch T. Scherg R. Rupp

Silicon carbide (SiC) has long been shown to be one of the most promising materials for high-voltage power semiconductor devices. New device technologies and products have lead to an ever increasing size and variety of the markets addressed by SiC. The specific material properties and the new applications served by SiC devices give rise to specific reliability requirements, reaching beyond the ...

Journal: :IEICE Transactions 2007
Yoshioki Isobe Kiyohito Hara Dondee Navarro Youichi Takeda Tatsuya Ezaki Mitiko Miura-Mattausch

We have developed a new simulation methodology for predicting shot noise intensity in Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). In our approach, shot noise in MOSFETs is calculated by employing the two dimensional device simulator MEDICI in conjunction with the shot noise model of p-n junction. The accuracy of the noise model has been demonstrated by comparing simulation resul...

2006
K. M. Indlekofer

We show that nanoscale doping profiles inside a nanocolumn in combination with Fermi-level pinning at the surface give rise to the formation of a saddlepoint in the potential profile. Consequently, the lateral confinement inside the channel varies along the transport direction, yielding an embedded quantum point contact. An analytical estimation of the quantization energies will be given.

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