Photonics support in the European programmes dates back to early 90 s , though “Telematics” and “Esprit” initiatives (1983 1998) primarily focused on then emerging field of optical telecommunication, fibre optics, optoelectronic, detectors III-Vs semiconductor lasers.

Extreme ultraviolet (EUV) and soft X-ray (SXR) radiations have a wide range of scientifi c [1], biomedical [2], and industrial applications [3]. For these reasons, monitoring the radiation parameters on line, such as the energy, intensity, angular distribution and reproducibility becomes very important. Semiconductor detectors play an important role due to their high sensitivity, linearity and ...

Germanium orthogonal strip detectors have been produced using amorphous-semiconductor contacts. The amorphoussemiconductor contact fabrication process is relatively simple, and it is capable of producing fine-pitched electrode structures. The bipolar blocking behavior of the amorphoussemiconductor contact permits its use on both sides of a detector, replacing conventional B ion implanted and Li...

We analyze the effects of electrode size on performance of arrays of semiconductor gamma-ray detectors, especially when there is significant charge trapping. With large electrodes, motions of holes and electrons are of equal importance, but when the positive electrode is segmented into an array of small elements the contributions of holes to the output, and hence the effects of hole trapping, a...

We have developed high energy and high spatial resolution 1D and 2D solid state imaging detectors and their custom integrated circuits (ICs). Readout ICs are now regarded to be an integral part of position-sensitive semiconductor detectors, especially for Si and CdZnTe for x-ray and gamma-ray imaging. These detectors have a 1D or 2D structure. The 1D structure types are mostly used for scanning...

We propose a new scintillation-type detector in which high-energy radiation generates electron–hole pairs in a direct-gap semiconductor material that subsequently recombine producing infrared light to be registered by a photo-detector. The key issue is how to make the semiconductor essentially transparent to its own infrared light, so that photons generated deep inside the semiconductor could r...

High spatial mode matching efficiencies are experimentally demonstrated when open-loop frequency-stabilized GaAlAs semiconductor lasers are heterodyned on silicon p-i-n detectors. Repeatable values of 75 percent are obtained using two independent lasers. The mode matching efficiency increases to 90 percent when a single modulated laser is self-heterodyned using an unequal path length MachZehnde...

The multi-billion-dollar market for micro-electro-mechanical systems (MEMS) devices containing micron-sized moving parts produced by photolithographic processes is overwhelmingly dominated by silicon. However, this material is not suitable for the fabrication of certain devices, and academic institutions and company research labs are using various compound semiconductor materials to produce MEM...