Pt/AlGaN/AlN/GaN Schottky diodes have been fabricated and characterized for H2 sensing. Platinum (Pt) with a thickness of 20nm was evaporated on the sample to form the Schottky contact. The ohmic contact, formed by evaporated Ti/Al/Ni/Au metals, was subsequently annealed by a rapid thermal treatment at 860°C for 30 s in N2 ambience. Both the forward and reverse current of the device increased g...

Silicon carbide (SiC) is the perfect cross between silicon and diamond. The crystal lattice of SiC is identical to silicon and diamond, but, exactly half the lattice sites are occupied by silicon atoms and half by carbon atoms. Like-diamond SiC has electronic properties superior to silicon, but, unlike diamond it is also manufacturable. The thermal leakage current (dark current) in SiC is sixte...

An Ag/Pc/p-Si Schottky barrier (SB) diode was fabricated. The current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G-V) measurements were carried out to determine the characteristic parameters such as barrier height, ideality factor and series resistance of the SB diode. The non-linear behavior of ln (I) vs. ln (V) and ln (I/V) vs. V plots indicated that the thermoionic emi...

In this paper, the design of a waveguide fixtuned 220GHz subharmonically pumped mixer using Schottky planar diodes is demonstrated. It is supposed to be applied in an experimental short-range and high-speed communication system. The anti-parallel pair of planar Schottky diodes from the Rutherford Appleton Laboratory (RAL) was flip-chip mounted and soldered onto a suspended 75μm-thick quartz mic...

We demonstrate heterodyne mixing of a 94 GHz millimetre wave photonic signal, supplied by a Gunn diode oscillator, with coherent acoustic waves of frequency ~100 GHz, generated by pulsed laser excitation of a semiconductor surface. The mixing takes place in a millimetre wave Schottky diode, and the intermediate frequency electrical signal is in the 1-12 GHz range. The mixing process preserves a...

The electrical performances of the heterojunction of n-ZnO nanowires with p-Si substrate at the nanometer scale have been characterized using an ultrahigh-vacuum conducting atomic force microscopy. Compared with the expected values of 1.0–2.0 reported in p-n junction in the previous studies, the abnormally high diode ideality factor 2 was obtained. It elucidates that a ZnO–Si p-n junction can b...

Experimental results on 60GHz band signal transmission through ECOR (Electromagnetic Coupling of Open-Ring Resonators) are shown. Through 200μm sapphire substrate, 60-70GHz band signal are transmitted with 58.9% transmission efficiency and 7.4GHz bandwidth. However, the transmission band was shifted about 10GHz higher frequency. The reason is under investigation. ECOR technology is extended to ...

We introduce a novel high-voltage SiC p-i-n diode considering charge plasma approach. This technique facilitates the formation of anode and cathode regions within silicon carbide without requiring any impurity doping by taking advantage work-function difference between metal electrodes. Utilizing 2-D TCAD simulation, we represent performance proposed doping-less is analogous to Schottky in term...

The effects of modulation frequency, RF reference power, and external bias upon the sensitivity and dynamic range of microwave homodyne detection systems was measured for point contact diodes and low l/f noise Schottky and backward diodes. The measurements were made at 4.89 GHz using a signal to noise ratio of 3 dB and a detection system bandwidth of 10 Hz. Maximum sensitivities of -135, -150, ...

The interface formation mechanism during the molecular-beam epitaxy (MBE) of InAs/GaP has been studied with the aid of the In–Ga–P phase diagram. It is discovered that an initial dissolution and crystallization process similar to liquid phase epitaxy (LPE) may happen at sufficiently high temperature, resulting in a graded composition at the interface. Consequently, “parasitic LPE/MBE” is the na...