A new type of ultraviolet (UV) light sensor based on film bulk acoustic wave resonator (FBAR) is proposed. The new sensor uses gold and a thin n-type ZnO layer deposited on the top of piezoelectric layer of FBAR to form a Schottky barrier. The Schottky barrier's capacitance can be changed with UV light, resulting in an enhanced shift in the entire FBAR's resonant frequency. The fabricated UV se...

In this study, the design and fabrication of AZO/n-Si Schottky barrier diodes (SBDs) with hydrogen plasma treatment on silicon surface and AlxOx guard ring were presented. The Si surface exhibited less interface defects after the cleaning process following with 30 w of H₂ plasma treatment that improved the switching properties of the following formed SBDs. The rapid thermal annealing experiment...

In this work, a deliberate etching-based top-down approach is proposed to fabricate the GaN nanorod (NR) Schottky barrier diode (SBD). As key step during fabrication, impact of wet-etching process on device performance systematically studied. By virtue reduced surface states at sidewall, NR SBD with substantially improved, delivering forward turn-on voltage 0.65 V, current density ∼10 kA/cm2 3 ...

SiC Schottky Barrier diodes (SiC-SBD) are known to oscillate/ring in the output terminal when used as free-wheeling diodes in voltage source converters. This ringing is due to RLC resonance between the diode capacitance, parasitic resistance and circuit stray inductance. In this paper, a model has been developed for calculating the switching energy of SiC diodes as a function of the switching r...

In this paper, we aim to demonstrate a novel scheme for integration of nanostructured semiconductor Graphene Oxide (GO) shottky diodes on flexible substrate for a wide range of sensing applications. The platform introduces a novel flexible GO/Pt/n-Si and GO/Pt/SiN composite structures which provides excellent optical and electrical properties, while maintaining an acceptable mechanical, biocomp...

This paper focuses on the role of the power MOSFET in achieving high-efficiency converter design. It provides a brief overview of current low-voltage MOSFET trench technologies, along with a discussion about onresistance versus gate charge trade-offs for MOSFETs optimized for use as control or synchronous switches. It covers the importance of the integrated Schottky diode (SyncFETTM MOSFET) in ...

The Information-Theoretic Schottky Problem treats the period matrix of a compact Riemann Surface as a compressible signal. In this case, the period matrix of a smooth plane curve is characterized by only 4 of its columns, a significant compression.

We report on the first THz balanced mixer/upconverter using a Schottky diode MMIC chip. Using an optically pumped laser at 1562 GHz as an LO source with a coupled power of about 1 mW, and 1 mW input at an IF frequency of 10 GHz, we obtained a sideband output power of 23 uW (sum of two sidebands). As a mixer, at an LO of 1621 GHz, we obtain a conversion loss of 12.4 dB DSB and a noise temperatur...