Magnetite thin films with a preferred ~111! orientation have been deposited by reactive dc magnetron sputtering from a pure Fe target onto ~100! GaAs substrates at 400 °C. The films show a clear Verwey transition in both the magnetization and sheet resistance as functions of temperature. For films deposited onto semiconducting n-type GaAs substrates, we have obtained asymmetric current–voltage ...

For Silicon devices, the forward voltage drop of the pn-junction rectifier can not be reduced below about 0.8 volts even if the device is not required to block higher reverse voltage. In the case of the output rectifiers used in power supplies for computers and telecommunications, this voltage drop is a large fraction of the output voltage of 5V or less. This results in a loss in the power supp...

We present a quantum mechanical memristive Nb/Al/Al2O3/NbxOy/Au device which consists of an ultra-thin memristive layer (NbxOy) sandwiched between an Al2O3 tunnel barrier and a Schottky-like contact. A highly uniform current distribution for the LRS (low resistance state) and HRS (high resistance state) for areas ranging between 70 μm2 and 2300 μm2 were obtained, which indicates a non-filamenta...

Pt/ZnO nanorod (NR) and Pt/modified ZnO NR Schottky barrier ultraviolet (UV) photodetectors (PDs) were prepared with different seed layers and metal oxide modifying layer materials. In this paper, we discussed the effect of metal oxide modifying layer on the performance of UV PDs pre- and post-deposition annealing at 300°C, respectively. For Schottky barrier UV PDs with different seed layers, t...

Tantalum silicide (TaSix ) films with different Si to Ta ratios (x) as Schottky contacts to GaAs have been studied. The films were prepared by coevaporation. The metallurgical properties of the film and the stability of the silicide-GaAs interface were studied by x-ray diffraction, Auger electron spectroscopy, and Rutherford backscattering spectroscopy. The films were annealed at various temper...

A time-dependent effective-mass SchrödingerPoisson solver is used to study the frequency dependence of the gate capacitance of a short Schottky-barrier carbon nanotube field-effect transistor (CNTFET). A delayed (re)charging of the channel causes a (non-quasi-static) drop of the gate capacitance for higher frequencies on a characteristic scale, which can be related to the escape time of the car...

Abstract. It is well known that MIM (metal-insulator-metal) structures exhibit various high-field processes, which may be either electrode-limited (e.g. tunneling, Schottky-barrier emission) or bulk-limited (e.g. space-charge-limited conduction, Poole-Frenkel conduction). Thin films prepared using PECVD (plasma-enhanced chemical vapour deposition)exhibited Pool-Frenkel conductivity (Schottky co...

We describe the design, fabrication, and characterization of superconducting 1n0.47 GaO.53 As junction field-eftect transistors (JFETs) with Nb source and drain electrodes. In0.47 GaO.5 , As has the advantage of combining large coherence length and high Schottky barrier transmission. making it a very attractive material on which to base superconducting FETs. At large voltages these devices beha...

We show that the accumulation of spin-polarized electrons at a forward-biased Schottky tunnel barrier between Fe and -GaAs can be detected electrically. The spin accumulation leads to an additional voltage drop across the barrier that is suppressed by a small transverse magnetic field, which depolarizes the spins in the semiconductor. The dependence of the electrical accumulation signal on magn...

Reverse bias leakage current through 4H-SiC Schottky diodes was modeled using quantum transmission theory and the theoretically calculated values were compared with measured from fabricated diodes. To account for interface defects, energy barriers due to Fermi pinning previously observed defects used in place of ideal barrier structure predicted by Schottky–Mott rule. Incorporating set at known...