In this work, the position-controlled growth of GaN nanowires on sapphire wafers and on N-polar GaN templates is presented using selective area vapor-liquid-solid growth in a metalorganic vapor phase reactor. Misoriented sapphire wafers and TMIn acting as surfactant are applied in order to achieve N-polar GaN buffer layers with high crystal and surface quality, suitable for a subsequent nano-pa...

Electrical through-wafer interconnects (ETWI) are often integrated with inertial sensors for harsh liquid environment applications. Devices with metal interconnects are very susceptible to corrosion in aquatic environments. An alternative approach is to form highly doped, conductive polysilicon through the wafer from the back side (unexposed to harsh environments) to the front side of the devic...

In this paper, we present the experimental results on Critical Dimension (CD) control via real-time temperature control for warped wafers. As opposed to run-to-run control where information from the previous wafer or batch is used for control of the current wafer or batch, the approach here is real-time and make use of current information for control of the current wafer CD. In this paper we de...

Two stacked integration methods have been developed to enable advanced microsystems of microelectromechanical systems (MEMS) on large scale integration (LSI). One is a wafer level transfer of MEMS fabricated on a carrier wafer to a LSI wafer. The other is the use of electrical interconnections using through-Si vias from the structure of a MEMS wafer on a LSI wafer. The wafer level transfer meth...

Sapphire single crystal [a-Al2O3(0 0 0 1)] samples were treated by irradiation with Ti‡ ions in the energy range 0.5±7.0 keV at 25°C and 750°C under UHV conditions for total doses of 10 Ti‡/cm2. These Ti treated sapphire samples were studied by ex situ X-ray photoelectron spectroscopy (XPS) depth pro®ling and by atomic force microscopy (AFM). Aluminum in the oxidation states Al0;3‡;x‡, where 0 ...

Experimental study on slicing of sapphire with fixed abrasive diamond wire saw was conducted in this paper. The process parameters were optimized through orthogonal experiment of three factors and four levels. The effects of wire speed, feed speed and tension pressure on the surface roughness were analyzed. Surface roughness in cutting direction and feed direction were both detected. The result...

Nanopatterned aluminum nitride (NP-AlN) templates were used to enhance the light extraction efficiency of the light-emitting diodes (LEDs). Here, the NP-AlN interlayer between the sapphire substrate and GaN-based LED was used as an effective light outcoupling layer at the direction of bottom side and as a buffer layer for growth of GaN LEDs. The cross-sectional transmission electron microscopy ...

Optically transparent immersion liquids with refractive index (n∼1.77) to match the sapphire-based aplanatic numerical aperture increasing lens (aNAIL) are necessary for achieving deep 3D imaging with high spatial resolution. We report that antimony tribromide (SbBr3) salt dissolved in liquid diiodomethane (CH2I2) provides a new high refractive index immersion l...