The recent many-body expanded full configuration interaction (MBE-FCI) method is reviewed by critically assessing its advantages and drawbacks in the context of contemporary near-exact electronic structure theory. Besides providing a succinct summary history MBE-FCI to date within generalized unified theoretical setting, finer algorithmic details are discussed alongside our optimized computatio...

We report the growth of ZnSe nanowires and nanoneedles using molecular beam epitaxy (MBE). Different growth regimes were found, depending on growth temperature and the Zn–Se flux ratio. By employing a combined MBE growth of nanowires and nanoneedles without any postprocessing of the sample, we achieved an efficient suppression of stacking fault defects. This is confirmed by transmission electro...

The numerical simulation of the dynamics of the molecular beam epitaxy (MBE) growth is considered in this article. The governing equation is a nonlinear evolutionary equation that is of linear fourth order derivative term and nonlinear second order derivative term in space. The main purpose of this work is to construct and analyze two linearized finite difference schemes for solving the MBE mod...

We report the first photoluminescence (PL) characterization of InAs nanowires (NWs). The InAs NWs were grown on GaAs(111) B and Si(111) substrates using the Au-assisted molecular beam epitaxy (MBE) growth technique or metal-organic chemical vapor deposition (MOCVD). We compared the PL response of four samples grown under different conditions using MBE or MOCVD. High-resolution transmission elec...

We report the fabrication of near-vertically elongated GaN nanorods on quartz substrates. To control the preferred orientation and length of individual GaN nanorods, we combined molecular beam epitaxy (MBE) with pulsed-mode metal-organic chemical vapor deposition (MOCVD). The MBE-grown buffer layer was composed of GaN nanograins exhibiting an ordered surface and preferred orientation along the ...

3D InGaN/GaN microstructures grown by metal organic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE) have been extensively studied using a range of electron microscopy techniques. The growth of material by MBE has led to the growth of cubic GaN material. The changes in these crystal phases has been investigated by Electron Energy Loss Spectroscopy, where the variations in the fine s...

We report on ammonia and plasma-assisted molecular beam epitaxy (NH3-MBE PAMBE) grown GaN layers with a low net carrier concentration (Nnet). Growth parameters, such as growth rate, V–III ratio, plasma power, were investigated different substrates to study their impact surface morphology background doping levels using atomic force microscopy capacitance–voltage (C–V) measurements, respectively....

Recently, a number of coding techniques have been reported to achieve near toll quality synthesized speech at bit-rates around 4 kb/s. These include variants of Code Excited Linear Prediction (CELP), Sinusoidal Transform Coding (STC) and Multi-Band Excitation (MBE). While CELP has been an effective technique for bit-rates above 6 kb/s, STC, MBE, Waveform Interpolation (WI) and Mixed Excitation ...