نتایج جستجو برای: qw factorization

تعداد نتایج: 22639  

Journal: :IEICE communications express 2023

Studies have recently been conducted to model mobile agents on unknown graphs, such as random walks (RWs) and understand their mathematical properties. In this study, we investigate the extent which properties of RWs can be improved when access very limited information. We propose Q-weighted walk (QW-RW), in an agent decides a next node by using Q-values learned Q-learning, examine its effectiv...

2000
M. C. Tamargo W. Lin S. P. Guo Y. Guo Y. Luo Y. C. Chen

We have grown p-type ZnCdMgSe quaternary layers and have fabricated light-emitting diodes (LEDs) from pseudomorphic quantum well (QW) structures of ZnCdSe/ZnCdMgSe grown on InP substrates that emit throughout the visible range. Nearly identical structures, di!ering only in the ZnCdSe QW layer thickness and/or composition can produce light ranging from blue to red. Good current}voltage character...

2001
San-Liang Lee

The wavelength dependency of transparent current is investigated theoretically and empirically for bulk and quantum-well (QW) materials. A new analytical formula is presented for obtaining accurate Fermi levels of QW structures under current injection. The transparent current can be described with an exponential function of the wavelength using two fitting parameters. The simple expression can ...

2001
J.-Y. Yeh N. Tansu

Low threshold InGaAsN QW lasers with lasing wavelength at 1.378 and 1.41 mm were demonstrated by metal organic chemical vapour deposition (MOCVD). The threshold current densities are 563 and 1930 A=cm for the 1.378 and 1.41 mm emitting lasers, respectively. The significant improvement of device performance is believed due to utilisation of high temperature annealing and introduction of GaAsN ba...

2002
Arup Neogi Chang-Won Lee Henry O. Everitt Takamasa Kuroda Atsushi Tackeuchi Eli Yablonovitch

Using time-resolved photoluminescence measurements, the recombination rate in an In0.18Ga0.82N/GaN quantum well ~QW! is shown to be greatly enhanced when spontaneous emission is resonantly coupled to a silver surface plasmon. The rate of enhanced spontaneous emission into the surface plasmon was as much as 92 times faster than QW spontaneous emission into free space. A calculation, based on Fer...

2014
Brian Swanson Jeffrey Ming Haobo Ren Lin Wang Sally Wenzel Lisa Beck Thomas Diciccio Yongtao Li Pavel Belomestnov Neil Graham Gianluca Pirozzi Jennifer Hamilton

Methods The clinical trial design and results in adult patients were previously reported for asthma (NEJM 2013;368:2455) and AD (JID 2013;133:S177-S178). In the asthma study, inhaled glucocorticoids and long-acting beta-agonist were withdrawn after week 4 [W4] of 12 weeks of qw DPL [300 mg] or placebo [PBO]. Asthma exacerbation occurrence was the primary endpoint. Fractional exhaled nitric oxid...

2013
B. Aronzon A. Davydov M. Goiran B. Raquet A. Lashkul

We study experimentally the electronic transport and magnetism of GaAs/InGaAs/GaAs quantum wells (QW) with remote Mn -layer. The 2D energy spectrum of the carriers is revealed by quantum Hall Effect measurements. The ferromagnetic ordering is evidenced by anomalous Hall Effect and direct magnetization measurements. A signature of this state is also observed on the temperature dependence of the ...

2000
S. A. Vitusevich A. Förster W. Reetz H. Lüth S. V. Danylyuk

The photoresponsivity spectra of double-barrier resonant tunneling diodes have been measured in a wide range of light wavelength as well as applied voltage. The complex behavior of measured spectra is analyzed taking into account different channels for electron injection into the quantum well ~QW!. It has been shown that the photoresponse in the infrared wavelength range could arise not only fr...

Journal: :Optics express 2014
Chentian Shi Chunfeng Zhang Fan Yang Min Joo Park Joon Seop Kwak Sukkoo Jung Yoon-Ho Choi Xiaoyong Wang Min Xiao

Efficiency droop is a major obstacle facing high-power application of InGaN/GaN quantum-well (QW) light-emitting diodes (LEDs). In this paper, we report the suppression of efficiency droop induced by the process of density-activated defect recombination in nanorod structures of a-plane InGaN/GaN QWs. In the high carrier density regime, the retained emission efficiency in a dry-etched nanorod sa...

Since it is well-known that the Vandermonde matrix is ill-conditioned, while the interpolation itself is not unstable in function space, this paper surveys the choices of other new bases. These bases are data-dependent and are categorized into discretely l2-orthonormal and continuously L2-orthonormal bases. The first one construct a unitary Gramian matrix in the space l2(X) while the late...

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