High-power 2.3m In(Al)GaAsSb–GaSb type-I double quantum-well diode laser arrays were fabricated and characterized. Linear laser arrays with 19 100m-wide elements on a 1-cm-long bar generated 10 W in continuous-wave (CW) mode and 18.5 W in quasi-CW mode (30 s/300 Hz) at a heatsink temperature of 18 C. Array power conversion efficiency peaked at 30 A and was about 9%. Device internal efficiency w...

â φα = αφα , with α a complex number (see next page for a discussion of â and â†). Such a state is called a “coherent state”. Coherent states turn out to be the closest quantum analog of classical states with well-defined amplitudes and phases, and are extremely important in e.g. the quantum mechanical description of laser light, radio cavities, Bose-Einstein condensates, and just about everyth...

We review recent advances in the field of quantum dot lasers on silicon. A summary of device performance, reliability, and comparison with similar quantum well lasers grown on silicon will be presented. We consider the possibility of scalable, low size, weight, and power nanolasers grown on silicon enabled by quantum dot active regions for future short-reach silicon photonics interconnects. © 2...

In this study, a novel photoluminescent quantum dots device with laser-processed microscale patterns has been demonstrated to be used as a white light emitting source. The pulsed laser ablation technique was employed to directly fabricate microscale square holes with nano-ripple structures onto the sapphire substrate of a flip-chip blue light-emitting diode, confining sprayed quantum dots into ...

We perform optical frequency metrology of an iodine-stabilized He-Ne laser using a mode-locked Ti:sapphire laser frequency comb that is stabilized using quantum interference of photocurrents in a semiconductor. Using this technique, we demonstrate carrier-envelope offset frequency fluctuations of less than 5 mHz using a 1 s gate time. With the resulting stable frequency comb, we measure the opt...

We investigate exciton-photon quantum phase transitions in a planar lattice of one-mode cavities containing one quantum dot. The quantum dot can be occupied by up to two excitons with opposite spin. We adopt the well-established mean-field approximation comprising an exciton order parameter and a photon coherence parameter. Calculating excitonand photon-phase diagrams it is demonstrated that by...

A potential implementation of quantum-computation schemes in semiconductor-based structures is proposed. In particular, an array of quantum dots is shown to be an ideal quantum register for a noiseless information encoding. In addition to the suppression of phase-breaking processes in quantum dots due to the well-known phonon bottleneck, we show that a proper quantum encoding allows to realise ...

A thin-film InGaAs/GaAs edge-emitting single-quantum-well laser has been integrated with a tapered multimode SU-8 waveguide onto an Si substrate. The SU-8 waveguide is passively aligned to the laser using mask-based photolithography, mimicking electrical interconnection in Si complementary metal-oxide semiconductor, and overlaps one facet of the thin-film laser for coupling power from the laser...