نتایج جستجو برای: purity germanium
تعداد نتایج: 24042 فیلتر نتایج به سال:
It has been known for over twenty years that rhombohedral c-germanium telluride is predicted to be a narrow gap semiconductor. However, it always displays p-type metallic conduction. This behaviour is also observed in other chalcogenide materials, including Ge2Sb2Te5, commonly used for optically and electrically switched, non-volatile memory, and so is of great interest. We present a theoretica...
The accumulation of induced radioactivity within in-beam PET scanner scintillators is of concern for its long-term clinical usage in particle therapy. To estimate the effects on OpenPET which we are developing for in-beam PET based on GSOZ (Zi doped Gd2SiO5), we measured the induced radioactivity of GSO activated by secondary fragments in a water phantom irradiation by a (12)C beam with an ener...
Abstract The current research aims to evaluate the level of natural and industrial radioactive activity soil samples collected from city Shomali - Babil Governorate, by 13 with a depth 20 cm, where spectral analysis technique was used for high-purity germanium detector. Where it found that rate specific effectiveness each 226 Ra, 214 Pb, Bi, 232 Th, 212 228 Ac, 40 K, 60 Co in studied (28.4±3.47...
One important factor in using an High Purity Germanium (HPGe) detector is its efficiency that highly depends on the geometry and absorption factors, so that when the configuration of source-detector geometry is changed, the detector efficiency must be re-measured. The best way of determining the efficiency of a detector is measuring the efficiency of standard sources. But considering the fact t...
At germanium/high-k interfaces cations and oxygen interstitials can diffuse into the germanium substrate. Here we employ density functional theory calculations to investigate the interaction of a range of such cations (Al, Y, Zr, Nb, La, and Hf) with intrinsic defects and oxygen in germanium. It is predicted that high-k cations strongly bind with lattice vacancies, oxygen interstitials, and A-c...
We report room temperature electroluminescence of tensile-strained germanium microdisks. The strain is transferred into the microdisks using silicon nitride stressors. Carrier injection is achieved with Schottky contacts on n-type doped germanium. We show that a biaxial tensile-strain up to 0.72% can be transferred by optimizing the carrier injection profile. The transferred strain is measured ...
Here we report a simple, robust approach to patterning functional SAMs on germanium. The protocol relies on catalytic soft-lithographic pattern transfer from an elastomeric stamp bearing pendant immobilized sulfonic acid moieties to an NHS-functionalized bilayer molecular system comprising a primary ordered alkyl monolayer and a reactive ester secondary overlayer. The catalytic polyurethane-acr...
The reaction of GeBr with LiGe(SiMe(3))(3) yields the largest metalloid cluster compound of germanium Ge(14)[Ge(SiMe(3))(3)](5)Li(3)(THF)(6), in which 14 germanium atoms are arranged as a hollow sphere in the cluster core, showing that in the case of germanium also fullerene-like compounds might be present in the borderland between the molecular and solid states.
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