نتایج جستجو برای: power amplifiers pas

تعداد نتایج: 505050  

2010
O. Hammi M. Younes A. Kwan F. M. Ghannouchi

A novel approach is proposed for automated dimension estimation in memory polynomial based power amplifiers/transmitters behavioral models. This method consists of successively identifying the static nonlinearity order and memory depth of the model in accordance with a predefined performance criterion. The proposed method is validated using a 3G Doherty power amplifier driven by various WCDMA s...

2016
Meenakshi Thakur Rajesh Mehra

This paper proposes design of a low power sense amplifier. It is designed for the low power and delay of the circuit by using the variable threshold mos devices. Sense amplifiers are used in the memories to increase the speed for accessing data from different locations. So the speed of data read of SRAM is highly reliable on the design of sense amplifiers. The introduced circuit is tested under...

2013
Elena Serebryakova Kurt Blau Matthias A. Hein

This paper presents an analysis of a reconstruction filter in a switched mode power amplifier system. Doubly and singly terminated filters for current-mode class-S power amplifiers were analysed previously through analytical, numerical, and experimental approaches, and it was shown that only singly terminated filters can fulfil the requirements of current-mode switching amplifiers, owing to the...

2002
Dr. Allen

New communications services have created a demand for highly linear high power amplifiers (HPA's). TWTA's continue to offer the best microwave HPA performance in terms of power, efficiency, size and cost, but lag behing solid state power amplifiers (SSAPs) in linearity. This paper discusses techniques for improving TWTA linearity. The significance and methods for evaluation of linearity are rev...

2016
Vikrant Sharma Dalveer Kaur

Erbium doped fiber amplifiers (EDFA) are most commonly used in optical networks for the most assorted applications. The fast power transient effect of the cascaded erbium-doped fiber amplifiers (EDFA) in 45 channels optical ring network areinvestigated. The result shows, the power transient effect of EDFAs when channels are added and dropped.It is shown that, for low channel-adding/dropping fre...

1960
Anthony Lawrence Long Mark J. Rodwell

High Frequency Current Mode Class-D Amplifiers With High Output Power and Efficiency By Anthony Lawrence Long A 13 watt Current Mode Class-D (CMCD) with 60% efficiency is presented. This amplifier is the highest power switch mode microwave power amplifier reported to date. The CMCD architecture is an improvement over the Voltage Mode Class-D in that the parasitic reactance in the active device ...

Journal: :IEEE Access 2023

In this paper, we perform a comparative analysis between stacked common-emitter (SCE) and common-base topologies (SCB) for high efficiency broadband millimeter-Wave (mmWave) power amplifiers (PAs) in 250 nm InP-based heterojunction bipolar transistor (HBT) technology. We propose an analytical approach to design PA cells accounting complex load impedance intra-matching transistors allow optimal ...

Journal: :IEEE Transactions on Microwave Theory and Techniques 2021

In this article, we present a new method to reduce the model adaptation complexity for digital predistortion (DPD) of radio frequency (RF) power amplifiers (PAs) under varying operating conditions, using pretrained transformation coefficients. Experimental studies show that PA behavior variations can be effectively tracked small number “transformed” coefficients, even with large deviations in i...

2009
Abubakar Sadiq Hussaini R. A. Abd-Alhameed Jonathan Rodriguez

Radio signals typically are subject to very large transmission losses and distortions due to nonlinearities that might be added by the limited dynamic range of power amplifiers [1], [2]. Particularly, the signal gets distorted when the power amplifier is used at its full rated RF power level and/or Maximum efficiency is attained only at one single power level, usually closer to the maximum rate...

2014
Cristian Cismaru Mike Sun

Modern communications require high linearity for power amplifiers. GaAs heterojunction bipolar transistor (HBT) based amplifiers are proven to have high efficiency, good linearity, ruggedness, and low cost. In this paper we report on an improved linearity GaAs HBT device achieved through a novel engineered Ft curve. The novelty of the solution relies on the flatness of the Ft curve with device ...

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