Countries all over the world are making their contribution to common goal of energy saving and emission reduction. Solar is gaining more attention as a renewable source. Polysilicon an important raw material for solar panels production polysilicon vital part photovoltaic industry. typical process industry enterprise, its continuous highly intensive. Therefore, it necessary forecast analyze cons...

This paper compares the use of four mechanical methods for characterization of residual stress variation in low pressure chemical vapor deposited (LPCVD) polysilicon thin films deposited, doped, and annealed under different conditions. Stress was determined using buckling structures, vibrating microstructures, static rotating structures and the wafer curvature method. After deposition of 1.0 μm...

A new understanding of the deposition of in situ boron doped polysilicon based on a comparison between experimental results and modeling predictions, is proposed. The depletion of both silane and boron trichloride is put in evidence and the necessity of the use of injectors is established. 1 Introduction The in situ doping of polysilicon is of interest /I/, as this technique makes it possible t...

Polycrystalline silicon nanowires are synthesized using a classical fabrication method commonly used in microelectronic industry: the sidewall spacer formation technique. Assets of this technological process rest on low cost lithographic tools use, classical silicon planar technology compatibility and the possibility to get by direct patterning numerous parallel nanowires with precise location ...

The response of a polysilicon parallel-plate electrostatic actuator to AC signals at diierent bias voltages has been measured with a laser interferometer. Using microhinges, large plates (with areas from 100m 2 to 0:1mm 2) with long thin support beams (such as 60031:5m 3) are rotated oo the surface of the substrate to form a parallel-plate capacitor. Fabricated structures having 100m gaps can b...

Abstract The etching characteristics were studied via time-modulation bias (bias pulsing) by varying the pulsing parameters. etch profiles verified using polysilicon gate structures with dense and isolated patterns. Ion energy was defined as peak-to-peak voltage ( V pp ) controlled RF power. durations of on period off (off time) adjusted pulse frequency duty cycle. Profile evolution observed in...