نتایج جستجو برای: planar channel

تعداد نتایج: 286466  

Journal: :CoRR 2017
Yingming Tsai Le Zheng Xiaodong Wang

The millimeter-wave (mmWave) full-dimensional (FD) MIMO system employs planar arrays at both the base station and user equipment and can simultaneously support both azimuth and elevation beamforming. In this paper, we propose atomic-norm-based methods for mmWave FD-MIMO channel estimation under both uniform planar arrays (UPA) and non-uniform planar arrays (NUPA). Unlike existing algorithms suc...

AKBAR ZADEH A., , SALARI M., ,

AA3004 alloy is widely used in can making. The major concern in the production of canbodies is earing, which develop by high planar anisotropy of rolled sheet. Balance ofrecrystallisation and rolling textures together with a uniform and fine grain microstructure canminimize the earing. The effects of finish rolling temperature (FRT) on planar anisotropy,microstructure, texture development and m...

Journal: :Open Journal of Applied Sciences 2023

Taking the fluvial reservoir of Neogene Minghuazhen Formation in Bozhong S oilfield China as an example, a detailed study interlayer was conducted. From perspective sedimentary genesis interlayer, three types are summarized and analyzed, namely, fine grain sediment inter peak channel, suspended post flood abandoned channel sediment. At same time, combined with seismic waveform analysis, distrib...

2008
Bruno El-Bennich

It is argued that in the antiproton-proton annihilation into two mesons p̄p −→ m1m2, the origin of different angular momentum selection rules commonly obtained for planar annihilation diagrams A2 and for non-planar rearrangement diagrams R2 lies in the omission of momentum transfer between an annihilated antiquark-quark pair and a remaining quark or antiquark. Therefore, there is no reason for d...

2006
Yawei Jin Mark Johnson Doug W. Barlage Rhett Davis

JIN, YAWEI. Simulation Methodology to Compare Emerging Technologies for Alternatives to Silicon Gigascale Logic Device. (Under the direction of Dr. D. W. Barlage). Practical realization of low-power, high-speed transistor technologies for future generation nano-electronics can be achieved with novel structures, such as FinFET, tri-gate or with the integration of exotic channel materials, such a...

2012
Nobuyuki Sugii Hiroshi Iwai Kazuhiro Nakajima

Recently, multi-gate and nanowire field-effect-transistors (FETs) with three-dimensional (3D) channels have drawing much interest because they have excellent short-channel-effect immunity due to better electrostatic control of the channel potential by gate electrodes. Therefore, the metal-oxide-semiconductor (MOS) transistor with 3D channels has been considered as one of the promising candidate...

2012
Michael Melzer Daniil Karnaushenko Denys Makarov Larysa Baraban Alfredo Calvimontes Ingolf Mönch Rainer Kaltofen Yongfeng Mei Oliver G. Schmidt

We present a conceptually new approach for the detection of magnetic objects flowing through a fluidic channel. We produce an elastic and stretchable magnetic sensor and wrap it around capillary tubing. Thus, the stray fields induced by the flowing magnetic objects can be detected virtually in all directions (isotropic sensitivity), which is unique for elastic sensors when compared to their rig...

2014
Gargi khanna

In this paper review study on different types of Junctionless transistor is promoted. Here a comparative study of SOI, bulk planar, double gate and tunnel Junctionless field effect transistor. It is observed Junctionless transistor exhibits better short channel effects and ON current then inversion mode device. Tunnel Junctionless transistor exhibits the properties of both tunnel FET and Juncti...

2004
Eric R. Fossum Jong-In Song David V. Rossi

The two-dimensional electron gas charge-coupled device (ZDEG-CCD) structure for 111-V and other heterojunction materials is reviewed. Device design considerations for gate, insulator, and channel material parameters are presented. Optimization of ZDEG-CCD performance parameters such as well capacity, dark current, and transfer efficiency is discussed. Experimental results on AIGaAs/GaAs uniform...

2000
B. J. Hinds A. Dutta K. Nishiguchi

nano-crystalline Si dots of dimensions of 8nm have been incorporated into a variety of Coulomb blockade and floating gate memory devices. Structures include vertical transistor, planar electrode, nanoscale channel junction and 2-gate trench structure. Ballistic transport, Coulomb oscillation and memory effects are clearly demonstrated

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