The nanowire-supported quantum dot (NWQD) of GaN is an unconventional nanostructure, which extremely promising for realization UV photonics in general and room-temperature single photon generation particular. While GaN-NWQDs have several attributes, the crucial challenge exploiting their full potential, to reduce lateral dimensions QDs, order exciton Bohr radius GaN. Also critical suppress buil...

In this work, we report a new synthesis method to prepare a Cu nanowire electrocatalyst for selective CO2 reduction at room temperature and atmospheric pressure. Cu nanowire array electrodes were prepared through a two-step synthesis of Cu(OH)2 and CuO nanowire arrays on Cu foil substrates and a subsequent electrochemical reduction of the CuO nanowire arrays. The Cu nanowire arrays are able to ...

By performing first-principles calculation, we investigated the electronic properties of remotely p-type doping GaSb nanowire by a Zn-doped InAs shell. The results show that for bare zinc-blende (ZB) [111] GaSb/InAs core-shell nanowire the Zn p-type doped InAs shell donates free holes to the non-doped GaSb core nanowire without activation energy, significantly increasing the hole density and mo...

Undoped hematite nanowire arrays grown using plasma oxidation of iron foils show significant photoactivity (~0.38 mA cm(-2) at 1.5 V versus reversible hydrogen electrode in 1 M KOH). In contrast, thermally oxidized nanowire arrays grown on iron exhibit no photoactivity due to the formation of a thick (>7 μm Fe(1-x)O) interfacial layer. An atmospheric plasma oxidation process required only a few...

The effect of diameter variation on electrical characteristics of long-channel InAs nanowire metal-oxide-semiconductor field-effect transistors is experimentally investigated. For a range of nanowire diameters, in which significant band gap changes are observed due to size quantization, the Schottky barrier heights between source/drain metal contacts and the semiconducting nanowire channel are ...

Novel hierarchical Cd4SiS6/SiO2 based heterostructure nanowire arrays were fabricated on silicon substrates by a one-step thermal evaporation of CdS powder. The as-grown products were characterized using scanning electron microscopy, X-ray diffraction, and transmission electron microscopy. Studies reveal that a typical hierarchical Cd4SiS6/SiO2 heterostructure nanowire is composed of a single c...

We have modeled the field and space charge distributions in back-gate and top-gate nanowire field effect transistors by solving the three-dimensional Poisson's equation numerically. It is found that the geometry of the gate oxide, the semiconductivity of the nanowire, and the finite length of the device profoundly affect both the total amount and the spatial distribution of induced charges in t...

A twin-plane based nanowire growth mechanism is established using Au catalyzed Ge nanowire growth as a model system. Video-rate lattice-resolved environmental transmission electron microscopy shows a convex, V-shaped liquid catalyst-nanowire growth interface for a ⟨112⟩ growth direction that is composed of two Ge {111} planes that meet at a twin boundary. Unlike bulk crystals, the nanowire geom...

Research on shunted piezoelectric transducers, performed mainly over the past decade, has generated new opportunities for control of vibration and damping in flexible structures. This is made possible by the strong electromechanical coupling associated with modern piezoelectric transducers. In vibration control applications, a piezoelectric transducer is bonded to, or embedded in a base structu...