A low-cost, manufacturable defect gettering and passivation treatment, involving simultaneous anneal of a PECVD SiNx film and a screen-printed Al layer, is found to improve the lifetime in Si ribbon materials from 1-10 μs to over 20 μs. Our results indicate that the optimum anneal temperature for SiNx-induced hydrogenation is 700°C for EFG and increases to 825°C when Al is present on the back o...

The interface between hafnium oxide grown by atomic layer deposition and (100) GaAs treated with HCl cleaning and (NH4)2S passivation has been characterized. Synchrotron radiation photoemission core level spectra indicated successful removal of the native oxides and formation of passivating sulfides on the GaAs surface. Layer-bylayer removal of the hafnia film revealed a small amount of As2O3 f...

Due to its relatively low cost, high hydrogen yield, and environmentally friendly hydrolysis byproducts, magnesium hydride (MgH2) appears to be an attractive candidate for hydrogen generation. However, the hydrolysis reaction of MgH2 is rapidly inhibited by the formation of a magnesium hydroxide passivation layer. To improve the hydrolysis properties of MgH2-based hydrides we investigated three...

Article history: Received 17 July 2015 Revised 18 December 2015 Accepted in revised form 19 December 2015 Available online 21 December 2015 The main challenges of biological implants are suitable strength, adhesion, biocompatibility and corrosion resistance. This paper discusses fabrication, characterization and electrochemical investigation of anodized Ti6Al4V without and with a hydroxyapatite...

We report simple and effective methods to develop long-term, stable silicon nanowire-based pH sensors and systematic studies of the performance of the developed sensors. In this work, we fabricate silicon nanowire pH sensors based on top-down fabrication processes such as E-beam lithography and conventional photolithography. In order to improve the stability of the sensor performance, the senso...

We previously demonstrated highly stable backchannel cut and back-channel passivated amorphous silicon thin-film transistors (a-Si:H TFTs) made at 300C on 2.9-inch x 2.9-inch clear plastic substrates [1]. Mechanical stress in the TFT stack causes the substrate to expand or contract, which easily results in misalignment between consecutive device layers [2,3]. Therefore we developed three selfal...

We present results on the experimental and theoretical investigations of metal contacts on chalcogen passivated GaAs(1 0 0) surfaces. Photoemission spectroscopy investigations show that depending on the metal used for the contact formation the chalcogen passivation reduces the interaction between metals and GaAs(1 0 0). For Sb no chemical reaction at all with the substrate surface is found, whi...

deposition has been optimized for best quality at 250°C for the 250°C and 285°C processes, and at 200°C for the 200°C process [12] [13] [14]. Dry etching is used next to pattern the a-Si:H islands and open contact vias to the bottom metal. The top metal (Cr/Al based) is then thermally evaporated and patterned by wet etching. The n + a-Si:H is then cut at the backside of the a-Si:H channel by dr...

A Li-ion cell typically consists of a carbon-based negative electrode (NE); a porous polymer membrane separator (polypropylene and/or polyethylene); and a lithiated transition metal oxide (LiMxOy, M=Co, Ni, and/or Mn) positive electrode (PE). Electrodes are made by casting slurries of PE or NE-materials, PVDF-binder and carbon-black onto metal current collectors. Mixtures of Li-salts and organi...