نتایج جستجو برای: negf

تعداد نتایج: 250  

Journal: :Microelectronics Reliability 2013
Narjes Moghadam Mohammad Kazem Moravvej-Farshi Mohammad Reza Aziziyan

We propose a new Metal-oxide-semiconductor carbon-nanotube transistor (MOSCNT) in which source (S) and drain (D) regions are formed by band engineered multi-wall carbon nanotubes (BE-MWCNTs). The gradual potential profiles of these band-engineered S/D regions weakening the longitudinal confinements in the channel reduce the band-to-band tunneling significantly and hence eliminating the ambipola...

Journal: :Journal of Chemical Physics 2021

Confined nanoscale spaces, electric fields and tunneling currents make the molecular electronic junction an experimental device for discovery of new, out-of-equilibrium chemical reactions. Reaction-rate theory current-activated reactions is developed by combining a Keldysh nonequilibrium Green's functions treatment electrons, Fokker-Planck description reaction coordinate, Kramers' first-passage...

Journal: :Chinese Physics 2023

Injecting spins into nonmagnetic molecular devices has attracted much attention in spintronics. Herein, we propose a novel strategy to introduce magnetism single benzene molecule coupled with two armchair graphene nanoribbons (AGNR) electrodes, where the ends of AGNR electrodes are cut zigzag-edge triangular graphenes (ZTGs). The spin-dependent transport properties junction investigated by usin...

2003
Ramesh Venugopal Supriyo Datta Ephraim Fischbach David Janes Zhibin Ren Magnus Paulsson Prashant Damle Avik Ghosh Junghoon Rhew Anisur Rahman Sayed Hasan Jing Wang Jing Guo Uday Savagaonkar Dejan Jovanovic Rajesh Venugopal

Venugopal, Ramesh. Ph.D., Purdue University, August, 2003. Modeling Quantum Transport in Nanoscale Transistors. Major Professor: Mark Lundstrom. As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quantum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore, simulation tools which can be applied to design nanoscale t...

Journal: :Chemistry, an Asian journal 2013
Le-Jia Wang Ai Yong Kai-Ge Zhou Lin Tan Jian Ye Guo-Ping Wu Zhu-Guo Xu Hao-Li Zhang

Understanding the relationships between the molecular structure and electronic transport characteristics of single-molecule junctions is of fundamental and technological importance for future molecular electronics. Herein, we report a combined experimental and theoretical study on the single-molecule conductance of a series of oligo(phenylene ethynylene) (OPE) molecular wires, which consist of ...

2017
Sukhbir Singh Abir De Sarkar Bijender Singh Inderpreet Kaur

In the present work, density functional theory (DFT) combined with non-equilibrium Green’s function (NEGF) formalism is performed. The electronic properties (band structure and density of states) and transport properties (transmission spectrum and I–V characteristics) of armchair silicene nanoribbons (ASiNRs) doped with various elements, such as Al, Ga, In, Tl, P, As, Sb and Bi, are investigate...

2017
Yi Liu Zhun-Yong Ong Jing Wu Yunshan Zhao Kenji Watanabe Takashi Taniguchi Dongzhi Chi Gang Zhang John T. L. Thong Cheng-Wei Qiu Kedar Hippalgaonkar

Two-dimensional (2D) materials and their corresponding van der Waals heterostructures have drawn tremendous interest due to their extraordinary electrical and optoelectronic properties. Insulating 2D hexagonal boron nitride (h-BN) with an atomically smooth surface has been widely used as a passivation layer to improve carrier transport for other 2D materials, especially for Transition Metal Dic...

2009
J. Wan M. Cahay P. Debray R. Newrock

A non-equilibrium Green function formalism (NEGF) is used to study the conductance of a side-gated quantum point contact (QPC) in the presence of lateral spin-orbit coupling (LSOC). A small difference of bias voltage between the two side gates (SGs) leads to an inversion asymmetry in the LSOC between the opposite edges of the channel. In single electron modeling of transport, this triggers a sp...

2001
Jeremy Taylor Hong Guo Jian Wang

We report on a self-consistent ab initio technique for modeling quantum transport properties of atomic and molecular scale nanoelectronic devices under external bias potentials. The technique is based on density functional theory using norm conserving nonlocal pseudopotentials to define the atomic core and nonequilibrium Green’s functions ~NEGF’s! to calculate the charge distribution. The model...

نمودار تعداد نتایج جستجو در هر سال

با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید