Local dC/dV spectroscopy performed in a scanning capacitance microscope is used to map, quantitatively and with high spatial resolution, lateral variations in the threshold voltage of an AlxGa12xN/GaN heterostructure field-effect transistor epitaxial layer structure. Theoretical analysis and numerical simulations are used to quantify charge concentrations, the corresponding threshold voltage sh...

This paper is based on analysis of a common source - common gate low noise transconductance amplifier (CS-CG LNTA). Conventional noise analyses equations are modified by considering to the low output impedance of the sub-micron transistors and also, parasitic gate-source capacitance. The calculated equations are more accurate than calculated equations in other works. Also, analyses show that th...

The behavior of nanoscale energetic materials is quite different from micronsized energetic materials in many ways. Recently, some techniques such as sol-gel method, high speed air impaction and vacuum codeposition have been employed to obtain nanoscale energetic materials. However, only few attentions were paid to nanoscale energetic materials because of the fabrication difficulty. In this pap...

Abstract Despite technological advances in biomolecule detections, evaluation of molecular interactions via potentiometric devices under ion-enriched solutions has remained a long-standing problem. To avoid severe performance degradation bioelectronics by ionic screening effects, we cover probe surfaces field effect transistors with single film the supported lipid bilayer, and realize respectab...

Rapid and reliable antibiotic susceptibility testing (AST) platform is highly desired to select the right antibiotics treat infectious disease at early stage. Here, we demonstrate rapid ASTs using nanoscale silicon ion-selective field-effect transistor sensors. Our sensors profile bacterial metabolic kinetics by monitoring metabolism induced acidification in growth media with absence presence o...

In this paper, a three dimensional (3-D) analytical model of surface potential has been derived for gate engineered trapezoidal trigate Tunnel Field Effect Transistor (TFET). The obtained by assuming parabolic approximation the profile and solving 3-D Poisson equation using appropriate boundary conditions. device considered in work is silicon based TFET with composed two materials different fun...

An investigation was initiated to examine the effects of nanoscale titanium dioxide particles on plant growth and development. In view of the widespread cultivation of canola in Iran and in other parts of the globe and in view of the potential influence of titanium on its growth, this plant was chosen as the model system. Canola seeds were separately treated with different concentrations of nan...

Abstract The recent discovery of two-dimensional (2D) magnetic materials has opened new frontiers for the design nanoscale spintronic devices. Among 2D nano-magnets, bilayer CrI 3 outstands its antiferromagnetic interlayer coupling and electrically-mediated state control. Here, leveraging on electrical properties, we propose a lateral spin-valve transistor based , where spin transport is fully ...