Vertical versus diagonal designs Alpár Mátyás, Mikhail A. Belkin, Paolo Lugli, and Christian Jirauschek Emmy Noether Research Group “Modeling of Quantum Cascade Devices,” Technische Universität München, D-80333 Munich, Germany Institute for Nanoelectronics, Technische Universität München, D-80333 Munich, Germany Department of Electrical and Computer Engineering, The University of Texas at Austi...

Juan Atalaya, Shay Hacohen-Gourgy, 3 Leigh S. Martin, 3 Irfan Siddiqi, 3 and Alexander N. Korotkov Department of Electrical and Computer Engineering, University of California, Riverside, CA 92521, USA Quantum Nanoelectronics Laboratory, Department of Physics, University of California, Berkeley CA 94720, USA Center for Quantum Coherent Science, University of California, Berkeley CA 94720, USA. (...

2D nanoelectronics based on single-layer MoS2 offers great advantages for both conventional and ubiquitous applications. This paper discusses the large-scale CVD growth of single-layer MoS2 and fabrication of devices and circuits for the first time. Both digital and analog circuits are fabricated to demonstrate its capability for mixed-signal applications.

Artificial neural networks are intended to be used in future nanoelectronics since their biological examples seem to be robust to noise. In this paper, we analyze the robustness of Local Cluster Neural Networks and determine upper bounds on the mean square error for noise contaminated weights and inputs.

Two-dimensional materials open up tremendous opportunities for nanoelectronics and optoelectronics. Using first-principles density functional methods, we predict a family of two-dimensional boron-pnictogen materials. Our results show that these have excellent energetic, dynamical, thermal, mechanical, chemical stabilities. The intrinsic structural anisotropy found in leads to highly direction-d...