نتایج جستجو برای: nanocrystalline thin films

تعداد نتایج: 189436  

Journal: :chemistry of solid materials 2015
t. akbari s.m. rozati

in  this paper  thin  films of  tin sulfide (sns) were deposited on  the glass substrates using spray pyrolysis method with the substrate temperatures in the range of 400–600℃, keeping the other deposition parameters constant. in  this work  the characteristic of sns  thin  films  investigated. the xrd pattern and optical transmittance of thin films also are discussed. with the change in concen...

2003
Sigurd Wagner Helena Gleskova I-Chun Cheng Ming Wu

We are standing at the beginning of the industrialization of flexible thin-film transistor (TFT) backplanes. The two important research directions for the TFTs are (i) processability on flexible substrates and (ii) sufficient field-effect mobilities of electrons and holes to support complementary metal insulator semiconductor operation. The most important group of TFT capable semiconductors are...

2012
I. Gonzalez-Martinez A. Bachmatiuk S. Gorantla J. Kunstmann V. Bezugly T. Gemming B. Büchner G. Cuniberti M. H. Rümmeli

Related Articles Magnetocaloric and transport study of polyand nanocrystalline composite manganites La0.7Ca0.3MnO3/La0.8Sr0.2MnO3 J. Appl. Phys. 112, 023906 (2012) Germanium nanowire growth controlled by surface diffusion effects Appl. Phys. Lett. 101, 043105 (2012) Cross-sectional and plan-view cathodoluminescence of GaN partially coalesced above a nanocolumn array J. Appl. Phys. 112, 023507 (...

2016
Shigeaki Kobayashi Sadahiro Tsurekawa Tadao Watanabe

A new approach to grain boundary engineering (GBE) for high performance nanocrystalline materials, especially those produced by electrodeposition and sputtering, is discussed on the basis of some important findings from recently available results on GBE for nanocrystalline materials. In order to optimize their utility, the beneficial effects of grain boundary microstructures have been seriously...

2011
Mary W. Louie Sossina M. Haile

Hydrogen electro-oxidation kinetics at the Pt | CsH2PO4 interface have been evaluated. Thin films of nanocrystalline platinum 7.5–375 nm thick and 1–19 mm in diameter were sputtered atop polycrystalline discs of the proton-conducting electrolyte, CsH2PO4, by shadow-masking. The resulting Pt | CsH2PO4 | Pt symmetric cells were studied under uniform H2-H2O-Ar atmospheres at temperatures of 225–25...

2012
Jin Fang Chris B. Kang Yi Huang Sarah H. Tolbert Laurent Pilon

This paper reports the cross-plane thermal conductivity of ordered mesoporous nanocrystalline silicon thin films between 25 and 315 K. The films were produced by evaporation-induced self-assembly of mesoporous silica followed by magnesium reduction. The periodic ordering of pores in mesoporous silicon was characterized by X-ray diffraction and direct SEM imaging. The average crystallite size, p...

2006
D. S. Gianola

A combined experimental/simulation approach has been used to characterize the underlying deformation mechanisms associated with stress-assisted grain growth in nanocrystalline Al. Strain rate sensitivity experiments on freestanding submicron thin films undergoing stress-assisted grain boundary migration have uncovered rate sensitivities up to two orders of magnitude larger than previously repor...

B. Natarajan N. Jeyakumaran N. Prithivikumaran, V. Lakshmipriya

ZnO thin films with preferred orientation along the (002) plane were prepared onto the glass substrates by the sol-gel spin coating method for different post- annealing temperatures. The XRD study confirms that the thin films grown by this method have good crystalline hexagonal wurtzite structure. The optical band gap of the samples was determined from UV-visible spectra. It is found that the s...

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