نتایج جستجو برای: nano mosfet

تعداد نتایج: 53500  

Journal: :Physics in medicine and biology 2004
Tsang Cheung Martin J Butson Peter K N Yu

This note investigates temperature effects on dosimetry using a metal oxide semiconductor field effect transistor (MOSFET) for radiotherapy x-ray treatment. This was performed by analysing the dose response and threshold voltage outputs for MOSFET dosimeters as a function of ambient temperature. Results have shown that the clinical semiconductor dosimetry system (CSDS) MOSFET provides stable do...

2013

Power MOSFET technology has developed toward higher cell density for lower on-resistance. The super-junction device utilizing charge balance theory was introduced to semiconductor industry ten years ago and it set a new benchmark in the high-voltage power MOSFET market [1] . The Super-Junction (SJ) MOSFETs enable higher power conversion efficiency. However, the extremely fast switching performa...

2014
K. E. Kaharudin A. H. Hamidon F. Salehuddin

Vertical Double Gate (DG) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is believed to suppress various short channel effect problems. The gate to channel coupling in vertical DG-MOSFET are doubled, thus resulting in higher current density. By having two gates, both gates are able to control the channel from both sides and possess better electrostatic control over the channel. In o...

Journal: :Radiation protection dosimetry 2016
Brett J Mattison Giao B Nguyen Natalie Januzis Carolyn Lowry Terry T Yoshizumi

A novel method was presented for the effective dose (ED) measurement with metal-oxide-semiconductor field-effect transistor (MOSFET) detectors in dual-energy (DE) dual-source (DS) computed tomography (CT) scanner. This study demonstrated that the mean energy of the combined spectrum in dual-source computed tomography can be used to measure the ED. For validation, the MOSFET dose at the centre c...

2000
Herbert L. Hess

A reliable configuration for triggering a series string of power metal oxide semiconductor (MOS) devices without the use of transformer coupling is presented. A capacitor is inserted between the gate and ground of each metal oxide semiconductor field effect transistor (MOSFET), except for the bottom MOSFET in the stack. Using a single input voltage signal to trigger the bottom MOSFET, a voltage...

2015
Parthasarathy Nayak Jose Titus Kamalesh Hatua

Silicon carbide (SiC) MOSFET has the potential to replace silicon (Si) IGBT due to its superior switching performance. However due to presence of parasitic inductance in converter layout, device voltage and current experience overshoots and oscillations during device switching. These undesired overshoots increase switching loss. In the context of these parasitic inductances, the performance of ...

Journal: :IEEE Transactions on Nuclear Science 1974

1998
Kai Chen Chenming Hu

Analytical models on metal–oxide–semiconductor field-effect transistor (MOSFET) scaling and complementary (CMOS) ring oscillator performance developed recently are applied to revisit CMOS design guidelines because those based on the basic long channel model are obsolete. Handy and empirical equations for deep submicrometer MOSFET drain saturation current are developed. The differences between t...

2014
Amir Hossein ABDOLLAHI NOHOJI Fardad FAROKHI Majid ZAMANI

A neuro-fuzzy network approach is developed to model the nonlinear behavior of submicron metal-oxide semiconductor field-effect transistors (MOSFETs). The proposed model is trained and implemented as a MOSFET in a software environment. The training data are obtained through various simulations of a MOSFET Berkeley short channel insulated-gate field-effect transistor model 3 (BSIM3) in HSPICE, a...

2014
Munawar A. Riyadi Ismail Saad Razali Ismail

The recent development of MOSFET demands innovative approach to maintain the scaling into nanoscale dimension. This paper focuses on the physical nature of vertical MOSFET in nanoscale regime. Vertical structure is one of the promising devices in further scaling, with relaxed-lithography feature in the manufacture. The comparison of vertical and lateral MOSFET performance for nanoscale channel ...

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