نتایج جستجو برای: nano beam
تعداد نتایج: 162283 فیلتر نتایج به سال:
High angle annular dark field scanning transmission electron microscopy is used to analyze the polarity of ZnSe nanowires grown, by molecular beam epitaxy, on GaAs substrates. The experimental results are compared to simulated images in order to verify possible experimental artefacts. In this work we show that for this type of nano-objects, a residual tilt of the specimen below 15 mrad, away fr...
In this work, the position-controlled growth of GaN nanowires on sapphire wafers and on N-polar GaN templates is presented using selective area vapor-liquid-solid growth in a metalorganic vapor phase reactor. Misoriented sapphire wafers and TMIn acting as surfactant are applied in order to achieve N-polar GaN buffer layers with high crystal and surface quality, suitable for a subsequent nano-pa...
An all-solid-state 252 nm coherent light source with external cavities for laser cooling silicon atoms using twostage highly efficient frequency conversions has been developed. With the coherent light source, it is possible to manipulate the atomic motion of the silicon atoms, which is necessary for nano-process applications. In this paper, deflection, collimation, and axial velocity selection ...
We define superconducting constrictions by ploughing a deposited Aluminum film with a scanning probe microscope. The microscope tip is modified by electron beam deposition to form a nano-plough of diamond-like hardness what allows the definition of highly transparent Josephson junctions. Additionally a dc-SQUID is fabricated in order to verify the junctions behaviour. The devices are easily int...
The Nanorobotics series developed by Klocke Nanotechnik extend Scanning Electron or Ion Microscopes to material processing systems. The included automation allows the whole field of handling, assembly and manufacturing like known from a normal desktop system – now with nano-precision, including various kinds of image generation by using different sensors. Applications are in the field of Materi...
1. growth of high dielectric constant oxides on InGaAs and GaN using molecular beam epitaxy (MBE) and atomic layer deposition (ALD) 2. structural studies on hetero-structures of nano-thick Al2O3, HfO2, and Ga2O3(Gd2O3)/ InGaAs (and GaN) using high-resolution x-ray reflectivity using in-situ/ex-situ high-resolution synchrotron radiation and high-resolution transmission electron microscopy 3. cor...
در این رساله، روشهای احیایی نوین، بسیار موثر و سبز با استفاده از سدیم سیانو بوروهیدرید برای احیای گروههای عاملی کربونیلی، نیترو و اکسیم به صورت زیر ارائه می شود: - احیای ترکیبات کربونیلی با استفاده از nabh3cn در حضور nano fe3o4/h2so4 در دمای اتاق و شرایط بدون حلال - احیای ترکیبات کربونیلی با استفاده از nabh3cn در حضور nano fe3o4@sio2/h2so4 در دمای اتاق و شرایط بدون حلال - احیای ترکیبات کربون...
Micro- and nano-scale materials and systems based on zinc oxide are expected to explode in their applications in the electronics and photonics, including nano-arrays of addressable optoelectronic devices and sensors, due to their outstanding properties, including semiconductivity and the presence of a direct bandgap, piezoelectricity, pyroelectricity and biocompatibility. Most applications are ...
در سالهای اخیر تلاش زیادی برای سنتز کمپلکس های سوپرامولکول و پلیمرهای کوئوردیناسیونی بر مبنای لیگاندهای آلی چند دندانه شده است. این مواد به دلیل داشتن خواص منحصر به فرد، کاربردهای زیادی در صنعت دارند. سنتز پلیمرهای کوئوردیناسیونی جدید از سرب(ii) در ابعاد بالک(توده) و نانو با استفاده از روش گرادیان دمایی و به روش شاخه جانبی صورت گرفته و با روش طیف سنجی ir و پایداری گرمایی آن ها توسط آنالیزهای وز...
0167-9317/$ see front matter 2009 Elsevier B.V. A doi:10.1016/j.mee.2009.12.031 * Corresponding author. E-mail address: [email protected] (Z. Zalevsky) In this paper, we present the fabrication procedures as well as the preliminary experimental results of a novel method for significantly simplified deposition of charged nanoparticles at specific patterns based on focused ion beam (FIB) tech...
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