نتایج جستجو برای: n type semiconductor
تعداد نتایج: 2233675 فیلتر نتایج به سال:
Semiconductor ionic electrolytes, especially heterostructure composites, have a significant role in enhancing oxide ion conductivity and peak power density (PPD) because of their interfacial contact. In this work, the fluorite structure CeO2 spinel-based CoAl2O4 samples, as composite electrolyte, are successfully fabricated. The p-type n-type (CeO2-CoAl2O4) used an electrolyte exhibits cell per...
The effect of light flux, redox couple concentration, and the number of panels on the electrical and chemical efficiency of a bipolar semiconductor photoelectrode array has been examined using a model based on the power characteristic curves of a single photoelectrochemical cell and the current-voltage characteristics of any desired electrolytic process. Data from a single bipolar CdSe//CoS pho...
A theory based on the Bardeen formalism is developed for computing the tunnel current between a metal tip and a semiconductor surface. Tip-induced band bending in the semiconductor is included, with the electrostatic potential computed in a fully threedimensional model whereas the tunnel current is computed in the limit of large tip radii. Localized states forming at the semiconductor surface a...
At present various oxide of metal semiconductors play a significant role in the field electronics. Most semiconductor devices exploit special characteristics junction between p-type and n-type semiconductor. These can be made extremely small size they are incredibly fast their response. Generally have good reflectivity electromagnetic region infrared visible radiation. Indium material doped wit...
We report the controlled synthesis of axial modulation-doped p-type/intrinsic/n-type (p-i-n) silicon nanowires with uniform diameters and single-crystal structures. The p-i-n nanowires were grown in three sequential steps: in the presence of diborane for the p-type region, in the absence of chemical dopant sources for the middle segment, and in the presence of phosphine for the n-type region. T...
It has been shown that the photocatalytic activity of doped semiconductor with some nonmetals is higher than a pure semiconductor. Hence, with an attempt to achieve higher photocatalytic activity, doped ZnO with C, N, and S was prepared by a sedimentary process and used for the photocatalytic degradation of Fluocinolone Acetonidin as a drug in aqueous solutions. ...
The influence of n-type doping CdO with In or Y has been investigated by high-resolution ultraviolet and x-ray photoemission spectroscopy. It is found that core levels and valence band features suffer a shift to high binding energy due to doping. However this shift is less than the change in the width of the occupied conduction band. This provides a direct measurement of band gap shrinkage as a...
CMOS-compatible, heavily-doped semiconductor films are very promising for applications in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in this wavelength range. In this work we investigate n-type doped germanium epilayers grown on Si substrates. We design and realize Ge nanoantennas on Si substrates demonstrating the presence ...
In the present work, we develop a theoretical analysis to minimize the entropy generation of a thermo-electric cooler (TEC), which can be used to cool a processor. We have applied an analysis of first and second law of the Thermodynamics to a TEC. We consider the entropy generation equation as the objective function and the first law as a restriction, in accordance with the variational calculus...
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