Short-channel devices are preferred for realizing millimetre circuits, but these are affected by the shortchannel effects (SCE). Multi-Gate (MG) MOSFET is found to be an alternative to overcome this drawback. In this paper, study and analysis of DC and AC parameters of MG MOSFETs have been attempted and small signal gain (y21) of multi-gate structure is analytically derived. Design of low noise...

It is vital to measure the dose to the patient's skin during the treatment of total skin electron therapy (TSET). Purpose of the present study is to determine the benefits of using One-Dose MOSFET detectors in the treatment of mycosis fungiodes with TSET protocol. During the study six patients with advanced stage of (MF) were treated by (TSET) using a six dual-field Stanford technique. One-Dose...

The sub-threshold R-MOSFET resistor structure which enables tuning range extension below the threshold voltage in the MOSFET with moderate to weak inversion operation is analyzed in detail. The principal operation of the sub-threshold resistor is briefly described. The analysis of its characteristic based on approximations of a general MOS equation valid for all regions is given along with disc...

1.1 CMOS downscaling to DG-MOSFETs As device scaling aggressively continues down to sub-32nm scale, MOSFETs built on Silicon on Insulator (SOI) substrates with ultra-thin channels and precisely engineered source/drain contacts are required to replace conventional bulk devices (Celler & Cristoloveanu, 2009). Such SOI MOSFETs are built on top of an insulation (SiO2) layer, reducing the coupling c...

We develop and demonstrate the capability of a high order accurate finite difference weighted essentially non-oscillatory (WENO) solver for the direct numerical simulation of transients for a two space dimensional Boltzmann transport equation (BTE) coupled with the Poisson equation modeling semiconductor devices such as the MESFET and MOSFET. We compare the simulation results with those obtaine...

In this paper, a new design of three transistor XOR gate is proposed using Independent Driven Double Gate MOSFET to achieve ultra-low power in sub threshold conduction. The proposed design has been compared with the three transistor XOR implemented using Symmetrical Driven Double Gate MOSFET in sub threshold region. A three transistor XOR gate designed using Independent Driven Double Gate MOSFE...

A behavioral model in PSpice for a silicon carbide (SiC) power MOSFET rated at 1200V / 33A for a wide temperature range is developed by extracting the device parameters from the data sheet. The static and dynamic behavior of the SiC power MOSFET is simulated and compared with the device characteristics to validate the accuracy of the PSpice model. The temperature dependent behavior of the MOSFE...

Power MOSFETs require a gate drive circuit to translate the on/off signals from an analog or digital controller into the power signals necessary to control the MOSFET. This paper provides details of MOSFET switching action in applications with clamped inductive load, when used as a secondary synchronous rectifier, and driving pulse/gate drive transformers. Potential driver solutions including d...

In this paper, we apply our proposed computing algorithm for numerical solution of semiconductor device energy balance equation in carrier temperature simulation. This robust simulation based on finite volume discertization scheme and monotone iterative algorithm is successfully developed and implemented for intrinsic investigation of submicron MOSFET device. Simulation results demonstrate MOSF...