As the continuous down scaling of MOSFET device is required to increase the speed and packaging density of it, but it reduces the device characteristics in terms of short channel effect and reverse leakage current. At present, the single gate MOSFET reaching its scaling limit. These limitations associated with scaling give birth to number of innovative techniques which includes the use of diffe...

Scalability of Field Programmable Gate Array (FPGA) using spin MOSFET (spin FPGA) with magnetocurrent (MC) ratio in the range of 100% to 1000% is discussed for the first time. Area and speed of million-gate spin FPGA are numerically benchmarked with CMOS FPGA for 22nm, 32nm and 45nm technologies including 20% transistor size variation. We show that area is reduced and speed is increased in spin...

We investigate the effect of electrostatic screening on a nanoscale silicon MOSFET electrometer. We find that screening by the lightly doped p-type substrate, on which the MOSFET is fabricated, significantly affects the sensitivity of the device. We are able to tune the rate and magnitude of the screening effect by varying the temperature and the voltages applied to the device, respectively. We...

The synchronous buck circuit is in widespread use to provide “point of use” high current, low voltage power for CPU’s, chipsets, peripherals etc. In the synchronous buck converter, the power stage has a “high-side” (Q1 below) MOSFET to charge the inductor, and a “Low-side” MOSFET which replaces a conventional buck regulator’s “catch diode” to provide a low-loss recirculation path for the induct...

The radiation positioning system (RADPOS) combines an electromagnetic positioning sensor with metal oxide semiconductor field-effect transistor (MOSFET) dosimetry, enabling simultaneous online measurement of dose and spatial position. Evaluation points can be determined with the RADPOS. The accuracy of in-vivo proton dosimetry was evaluated using the RADPOS and an anthropomorphic head and neck ...

The IGFET or MOSFET is a voltage controlled field effect transistor that differs from a JFET in that it has a “Metal Oxide” Gate electrode which is electrically insulated from the main semiconductor n-channel or p-channel by a very thin layer of insulating material usually silicon dioxide, commonly known as glass. This ultra thin insulated metal gate electrode can be thought of as one plate of ...

This paper presents a brief discussion on the main MOSFET definitions of threshold voltage available in the literature and associated extraction methodologies. We have taken advantage of the Advanced Compact MOSFET (ACM) model, which accurately relates surface potential φS to inversion charge density I Q′ in all regions of operation. A new robust and precise extraction method based on the trans...

The design of PTAT generator using SCM and ACM is described in this paper. The PTAT voltage generator is created using the self cascade MOSFET .the SCM is fairly based on the advanced compact MOSFET which works on the inversion methodology in which the current is the main variable. The PTAT voltage generator is designed using cadence in 90nm technology whose operating voltage is 1.1v the PTAT v...

The use of nanometer CMOS technologies (below 90nm) however brings along significant challenges for circuit design (both analog and digital). By reducing the dimensions of transistors many physical phenomenon like gate leakage, drain induced barrier lowering and many more effects comes into picture. Reducing the feature size in the technology of device with the addition of ever more interconnec...