Scanning electron microscopy was used to study of the initial stages formation a semipolar GaN(1122) layer during Metalorganic Chemical Vapor Deposition on Si(113) substrates, surface which U-shaped grooves with element sizes <100 nm (NP-Si(113)) were formed. It found that NP-Si(113) substrates buffer AlN stimulate islands faceted by planes m-GaN, c-GaN. is shown there predominant growth...

In this paper, we demonstrate the direct epitaxial growth of c-plane GaN on a preheated (−2 0 1) β-Ga2O3 single-crystal substrate with no interlayer or pre-patterning processes by using atmospheric pressure metalorganic chemical vapor deposition method. The results show that high-temperature preheating (>500 °C) can modify surface morphology so crystalline quality grown layer be improved. Wi...