نتایج جستجو برای: metal mobility

تعداد نتایج: 289221  

Journal: :The Journal of clinical investigation 1984
J W Heinecke H Rosen A Chait

Modification of low density lipoproteins by human arterial smooth muscle cells was characterized by increased electrophoretic mobility and increased content of malondialdehyde-like oxidation products reactive with thiobarbituric acid. Lipoprotein modification was promoted by micromolar concentrations of iron or copper in the culture medium and was metal ion concentration- and time-dependent. Th...

Journal: : 2022

Organic matter content in soils is highly variable and includes dead living organisms their decomposition products. plant residue humic substances. Thermodynamically, organic unstable later will oxidize to Co2, H2O. The effective substances of are fulvic acids (FA+Hu) which contain Several functional groups that release electrons or protons during leaving behind several radical act as electron ...

2006
James M. Tiedje Terence L. Marsh

Desulfitobacterium hafniense is an anaerobic, low GC, Gram-positive spore-forming bacterium that shows considerable promise as a bioremediative competent population of sediments. Of particular relevance to its remediation capabilities are metal reduction, which changes the mobility and toxicity of metals, and chlororespiration, the ability to dechlorinate organic xenobiotics. Our work focuses o...

Journal: :Journal of Materials Chemistry C 2022

The single crystal field-effect transistor of 5,15-bis(triisopropylsilyl)ethynyltetrabenzoporphyrin exhibited better hole mobility than its metal complexes, with efficient charge transport through ?–? stacking along tetrabenzoporphyrin units.

2013
M. T. Morera J. J. Garrido

Morera, M. T., Echeverría, J. C. and Garrido, J. J. 2001. Mobility of heavy metals in soils amended with sewage sludge. Can. J. Soil Sci. 81: 405–414. Sewage sludges added to arable land can improve soil fertility and physical properties. However, the concentrations of heavy metals commonly found in sludges limits their application to soil. The purpose of this paper is to evaluate the mobility ...

2015
Yi Zhao

has been developing III-nitride double heterostructures (DHs) with indium gallium nitride (InGaN) channels with a view to high-electron-mobility transistors (HEMTs) [Yi Zhao et al, Appl. Phys. Lett., vol105, p223511, 2014]. The resulting structures boast the highest reported mobility for InGaN channels and superior transport at high temperature, according to the research team. Nitride semicondu...

Journal: :Nature materials 2004
C A Marianetti G Kotliar G Ceder

Despite many years of experimental searches for a first-order Mott transition in crystalline-doped semiconductors, none have been found. Extensive experimental work has characterized a first-order metal-insulator transition in Li(x)CoO(2), the classic material for rechargeable Li batteries, with a metallic state for x < 0.75 and insulating for x > 0.95. Using density functional theory calculati...

2013
Wan Ping Chen Ke Feng He Yu Wang Helen Lai Wah Chan Zijie Yan

Hydrogen in metal oxides usually strongly associates with a neighboring oxygen ion through an O-H bond and thus displays a high stability. Here we report a novel state of hydrogen with unusually high mobility and reactivity in metal oxides at room temperature. We show that freshly doped hydrogen in Nb₂O₅ and WO₃ polycrystals via electrochemical hydrogenation can reduce Cu²⁺ ions into Cu⁰ if the...

2012
Szu-Hung Chen Wen-Shiang Liao Hsin-Chia Yang Shea-Jue Wang Yue-Gie Liaw Hao Wang Haoshuang Gu Mu-Chun Wang

A three-dimensional (3D) fin-shaped field-effect transistor structure based on III-V metal-oxide-semiconductor field-effect transistor (MOSFET) fabrication has been demonstrated using a submicron GaAs fin as the high-mobility channel. The fin-shaped channel has a thickness-to-width ratio (TFin/WFin) equal to 1. The nano-stacked high-k Al2O3 dielectric was adopted as a gate insulator in forming ...

Journal: :Nano letters 2017
HoKwon Kim Dmitry Ovchinnikov Davide Deiana Dmitrii Unuchek Andras Kis

Toward the large-area deposition of MoS2 layers, we employ metal-organic precursors of Mo and S for a facile and reproducible van der Waals epitaxy on c-plane sapphire. Exposing c-sapphire substrates to alkali metal halide salts such as KI or NaCl together with the Mo precursor prior to the start of the growth process results in increasing the lateral dimensions of single crystalline domains by...

نمودار تعداد نتایج جستجو در هر سال

با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید