Silicon nanowire (SiNW) metal-oxide-semiconductor (MOS) capacitors with Al2O3/TiO2/Al2O3 (ATA) stacked dielectric films were fabricated by metal-assisted chemical etching (MACE) and atomic layer deposition (ALD). High-angle annular dark field scanning transmission electron microscopy (HAADF-STEM) images revealed that SiNWs conformally coated ATA although the cross-sectional shapes of MACE-SiNWs...

background and aims. the aim of this study was to compare shear bond strength (sbs) of metal and ceramic brackets bonded to enamel using acid versus er:yag laser etching. materials and methods. eighty premolars were divided into 4 groups: am (acid etching/ metal brackets), ac (acid etching/ ceramic brackets), lm (laser etching/ metal brackets) and lc (laser etching/ ceramic brackets). enamel co...

In this paper, we report an original method to immobilize a model peptide on silicon nanowires (SiNWs) via a photolinker attached to the SiNWs' surface. The silicon nanowires were fabricated by a metal assisted chemical etching (MACE) method. Then, direct characterization of the peptide immobilization on SiNWs was performed either by X-ray photoelectron spectroscopy (XPS) or by laser-desorption...

Surface passivation and bulk carrier lifetime of silicon nanowires (SiNWs) are essential for their application in solar cell devices. The effective minority carrier lifetime of a semiconductor material is influenced by both its surface passivation and bulk carrier lifetime. We found that the effective carrier lifetime of SiNWs passivated with aluminum oxide (Al2O3) was significantly influenced ...

In order to utilize nanostructured materials for potential solar and other energy-harvesting applications, scalable synthetic techniques for these materials must be developed. Herein we use a vapor phase conversion approach to synthesize nanowire (NW) arrays of semiconducting barium silicide (BaSi2) in high yield for the first time for potential solar applications. Dense arrays of silicon NWs o...

The reflection, transmission and absorbance spectra of silicon nanowire arrays (NWAs), as a function of the length of the nanowires, are investigated in a wavelength range of 15 mm , l , 200 mm, using Fourier transform infrared spectroscopy in vacuum. The NWAs are fabricated using metal-assisted electroless chemical etching. The wire length is varied between 20 mm and 140 mm, which is of the sa...

We report an easily manufacturable and inexpensive transparent conductive electrode for crystalline silicon (c-Si) solar cells. It is based on a silver nanoparticle network self-forming in the valleys between the pyramids of a textured solar cell surface, transformed into a nanowire network by sintering, and subsequently "buried" under the silicon surface by a metal-assisted chemical etching. W...

Electroless etching of semiconductors has been elevated to an advanced micromachining process by the addition a structured metal catalyst. Patterning catalyst lithographic techniques facilitated patterning crystalline and polycrystalline wafer substrates. Galvanic deposition metals on natural tendency produce nanoparticles rather than flat uniform films. This characteristic makes possible wafer...