The computed maximum a v a i l a b l e g a i n (MAG) and c u r r e n t g a i n (Ih211) from t h e de-embedded s-parameters show t h a t MAG i s unaffected by o p t i c a l i l l u m i n at i o n , however, Ih211 increases by more than 2 dB under o p t i c a l i l l u m i n a t i o n o f 1.5 mW. g a i n c u t o f f frequency (F t) o b t a i n e d by e x t r a p o l a t i n g t h e MAG and Ih21 I...

Damage free etching is required for the gate etching process in GaAs IC fabrication. While inductively coupled plasma (ICP) is thought to be the low damage etching technique, the degradation of DC characteristics was observed in our GaAs MESFETs. Threshold voltage shifts and Schottky barrier height is decreased. It was confirmed that the control of the antenna power (i.e. applied power to the u...

As one of the major suppliers in the area of High Frequency (HF) components, the Siemens Semiconductor HF Product Division stands for a continuous commitment to innovative Technologies and Products combined with a volume strategy. The Siemens Technology and Product Roadmap is directed to complete RF system solutions and device kits as well as standard and custom specific components in enhanced ...

We summarize our experience in solving the three-dimensional carrier continuity equations in our MOS/MES-FET simulator MINIMOS S. First we give a brief overview of the algebraic properties of the coefficient matrices. We show that the matrices are symmetrizable and can be solved by the symmetrized preconditioned CG algorithm. Since the symmetrization matrices are computationally infeasible due ...

We propose a new simple and accurate method for the higher order Taylor coefficient extraction of the channel current in GaAs MESFET. In this method, the nonlinear channel currents are directly measured through a hole current sensor and spectrum analyzer. Taylor coefficients up to 3rd order have been successfully extracted from the measured currents of the low frequency(4MHz, 25MHz) two-tone te...

In any high-speed digital circuit, problems like clock skew, transmission delays and off-chip communication are worrisome. Being particularly fast, GaAs technology is a good candidate for global clock free design. In this paper, a detailed analysis of several differential-type structures and C-elements, used to build self-timed delay-insensitive circuits, is carried out by HSPICE simulations in...