نتایج جستجو برای: mems switches
تعداد نتایج: 26359 فیلتر نتایج به سال:
Modern Magnetic Resonance Imaging (MRI) systems permit parallel, spatial-encoded MRI (pMRI) and as such it is now possible to have up to 128 adjacent coil elements in a coil array [1]. Together with reduced imaging times, pMRI can significantly help to enhance the signal to noise ratio (SNR) over extended fields of view (FOV) [2]. However, a large number of channels subsequently create new tech...
We are presenting an overview of MEMS-based (Micro-Electro-Mechanical System) optical switch technology starting from the reflective two-dimensional (2D) and three-dimensional (3D) MEMS implementations. To further increase the speed of the MEMS from these devices, the mirror size needs to be reduced. Small mirror size prevents efficient reflection but favors a diffraction-based approach. Two im...
An inertial micro-switch with multi-threshold acceleration detection capability has been proposed, taking advantage of electromechanical coupling behavior. A mathematical model behavior was established to display the dependence highly sensitivity on pull-in characteristic and show ability detect threshold by controlling voltage applied micro-switch. The that described in implemented occur at sw...
A microstructure beam is one of the fundamental elements in MEMS devices like cantilever sensors, RF/optical switches, varactors, resonators, etc. It is still difficult to precisely predict the performance of MEMS beams with the current available simulators due to the inevitable process deviations. Feasible numerical methods are required and can be used to improve the yield and profits of the M...
The microelectromechanical systems (MEMS) area has been developed extensively during the past three decades. In the 1970s, with the advancement of semiconductor microelectronics processing, researchers investigated wet anisotropic chemical etching processes for forming three dimensional silicon geometries. In the 1980s, researchers adopted the Metal-Oxide-Semiconductor (MOS) process to realize ...
In this paper we present a 3D nonlinear dynamic model which describes the transient mechanical analysis of an ohmic contact RF MEMS switch, using finite element analysis in combination with the finite difference method. The model includes real switch geometry, electrostatic actuation, the two-dimensional non-uniform squeeze-film damping effect, the adherence force, and a nonlinear spring to mod...
Chalcogenide Phase Change Materials (PCM) and metal insulator transition (MIT) materials are a group of that capable switching between low resistance high states. These emerging have been widely used in optical storage media memory devices. Over the past recent years, there interests exploiting PCM MIT materials, especially germanium antimony telluride (GST) alloys vanadium dioxide (VO <sub xml...
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