The Low Noise Amplifier (LNA) is very much important in achieving good reception sensitivity in the wideband transceiver of Ultra Wide Band (UWB) architecture. In this paper, the LNA is designed for Multi Band-Orthogonal Frequency Division Multiplexing (MB-OFDM) receiver, which is used to transmit the information on 14 different sub bands of UWB with minimum of 528 MHz frequency in each band. T...

Process variation is an obstacle in designing reliable CMOS mixed signal systems with high yield. To minimize the variation in voltage gain due to variations in process, supply voltage, and temperature for common trans conductance-based amplifiers, we present a new compensation method based on statistical feedback of process information. We further apply our scheme to two well known amplifier t...

This report describes the design of a two-stage broadband low-noise-amplifier (LNA) for the frequency range from 3 GHz to 9 GHz, using GaAs MESFETs with an ft of 20 GHz. The passive components were implemented with microstrips. In the frequency band of operation, the achieved noise figure (NF) is within 0.5 dB from the minimum NF of a single transistor, the power gain is 15 dB, flat within 1 dB...

This work details the optimization and evaluation of a CMOS low-noise amplifier by developing new algorithm for gm/ID approach combining with modified figure merit index method. The includes on-chip matching elements (such as IC inductors) resonance at targeted frequencies. simulation results optimized LNA model showed scattering parameter S21 = 19.91 dB, noise NF 3.54 dB excellent linearity th...

In this paper, a 24 GHz direct conversion receiver (DCR) for frequency-modulated continuous-wave (FMCW) ranging radar based on low flicker noise mixer in 90 nm silicon-on-insulator (SOI) CMOS technology is presented. A low-noise and low-power low-noise-amplifier (LNA) adopting simultaneous input matching (SNIM) method designed. Neutralized boost inductor are introduced to improve performance. T...

A 5GHz, 56dB voltage gain Low Noise Amplifier with built-in tunable center frequency and 30MHz bandwidth channel selection filter was implemented using 0.18μm CMOS process. Using compact high quality-factor 3-dimensional solenoid on-chip inductors, the LNA drains 0.9mA current from the 1.5V power supply and has 6.5dB noise figure. The power consumption can be further reduced if a smaller gain i...

A prototype design of a 2.7–3.3-V 14.5-mA SiGe direct-conversion receiver IC for use in third-generation wide-band code-division multiple-access (3G WCDMA) mobile cellular systems has been completed and measured. The design includes a bypassable low-noise amplifier (LNA), a quadrature downconverter, a local-oscillator frequency divider and quadrature generator, and variable-gain baseband amplif...

A novel low noise trans-impedance amplifier is proposed using low cost 0.18 µm CMOS technology. A resistive-capacitive feedback is used to extend the bandwidth of the amplifier. As the structure is inductor less, it is suitable for low cost integrated optical interconnects. In this paper Improved Particle Swarm Optimization have applied to determine optimal trans-resistance and noise of propose...

This paper presents a design of Ultra Wideband Low Noise Amplifier (LNA) with Negative Feedback and multisection matching network implementing on Microstrip design technique. The design started with selecting a transistor which is Super-low noise InGaAs HEMT MGF4937AM transistor that support ultra-wideband frequencies. In order to achieve ultra-wideband LNA, two different techniques which imple...

As demand for wireless broadband grows, so does the importance of cellular base station (BTS) performance. The low noise amplifier (LNA) on the antenna tower is a key element in establishing BTS performance, affecting both the base station’s area of coverage and its tolerance of other nearby transmitters. Integrated LNAs with active bias regulators, such as Avago Technology’s MGA-63x family, pr...