Stimulation of the intracerebral noadrenergic pathway (INP) increases hypothalamic blood flow as measured in conscious rabbits using a 133xenon washout technique. This increase is abolished by the intra-hypothalamic injection of 0.65 micrograms of the muscarinic antagonist atropine and by 5 micrograms of the nicotinic antagonist mecamylamine. Further, 1 micrograms of the cholinomimetic methacho...

Semiconducting, insulating, and metallic nanoparticles have attracted considerable interest due to their size-dependent, quantum confinement characteristics, which make them attractive for a wide range of optical, magnetic, and electronic devices. We report on the deposition of Pd nanoparticles prepared with reverse micellae of water/AOT/isooctane solution on the surface of n-type InP substrate...

In this work, the authors present results on the growth by atomic layer molecular beam epitaxy and characterization of lasers with one and three stacked layers of InAs quantum wires QWRs as active zone and aluminum-free waveguides on 001 InP substrates. The separated confinement heterostructure consists of n-p InP claddings and a waveguide formed by short period superlattices of InP 5 / GaInAs ...

Susanne Albers1 Evripidis Bampis2 Dimitrios Letsios3 Giorgio Lucarelli4 Richard Stotz1 1 Fakultät für Informatik, Technische Universität München {albers, stotz}@in.tum.de 2 Sorbonne Universités, UPMC Univ. Paris 06, UMR 7606, LIP6, Paris, France. [email protected] 3 Université de Nice Sophia Antipolis [email protected] 4 Université Grenoble-Alpes, INP, UMR 5217, LIG, France. giorgio.luca...

The work focuses on understanding and characterization of the thin-film vapor-liquid-solid (TFVLS) growth technique as a low-cost process technology for III-V thin film solar cells on metal/glass substrates. In the last review period, we have focused on understanding and controlling the nucleation events of TF-VLS InP. Furthermore, optoelectronic characterization of the grown InP has been perfo...

We propose and analyze a high-current III-V transistor design using electron transport in the Γand L-valleys of (111) GaAs. Using sp3d5s∗ empirical tight-binding model for band-structure calculations and the top-of-the-barrier transport model, improved drive current is demonstrated using L-valley transport in a strained GaAs channel grown on an (111) InP substrate. At a body thickness of 2 nm t...

: A process chain for a magnetoelectric device based on porous InP will be presented using only chemical, electrochemical, photoelectrochemical, photochemical treatments and the galvanic deposition of metals in high-aspect-ratio structures. All relevant process steps starting with the formation of a self-ordered array of current-line oriented pores followed by the membrane fabrication and a pos...

Oxide-free bonding of III-V-based materials for integrated optics is demonstrated on both planar Silicon (Si) surfaces and nanostructured ones, using Silicon on Isolator (SOI) or Si substrates. The hybrid interface is characterized electrically and mechanically. A hybrid InP-on-SOI waveguide, including a bi-periodic nano structuration of the silicon guiding layer is demonstrated to provide wave...

In this paper we present an in depth investigation on the effects of epitaxial lift off (ELO) on GaAs MESFETs. DC and microwave characteristics as well as thermal effects are considered. Devices were fabricated on a GaAs foundry process and transplanted by ELO. ELO is a technology by which epitaxially grown layers are lifted off from their growth substrate and are subsequently re-attached to a ...

The DARPA Diverse Accessible Heterogeneous Integration (DAHI) program is developing transistor-scale heterogeneous integration processes to intimately combine advanced compound semiconductor (CS) devices, as well as other emerging materials and devices, with high-density silicon CMOS technology. This technology is currently enabling RF/mixed signal circuits with revolutionary performance. For e...