In this work, InGaN/GaN light-emitting diodes (LEDs) with PN-type quantum barriers are comparatively studied both theoretically and experimentally. A strong enhancement in the optical output power is obtained from the proposed device. The improved performance is attributed to the screening of the quantum confined Stark effect (QCSE) in the quantum wells and improved hole transport across the ac...

We have investigated the effects of nonradiative recombination centers (NRCs) on the device performances of InGaN/GaN multi-quantum-well (MQW) light-emitting diodes (LEDs) incorporating low-temperature n-GaN (LT-GaN) underlying layers. Inserting an LT-GaN underlying layer prior to growing the MQWs is a successful means of separating the induced NRCs as a result of the presence of a growth inter...

We present a theoretical analysis of the gain characteristics of InGaN/AlGaN quantum dot (QD) lasers. We calculate the elastic strain distribution caused by the lattice mismatch between the QD and the barrier using an original method which takes into account the hexagonal symmetry of the structure’s elastic properties. The method is based on an analytical derivation of the Fourier transform of ...

We adopted the simple top-down etching to fabricate siteand dimension-controlled InGaN quantum dots. Each quantum dot is disk shaped and embedded in a nanoscale pillar. Arrays of nanopillars with varying densities and nanopillar diameters were fabricated from an InGaN/GaN single quantum well using inductivelycoupled plasma reactive-ion etching. Micro-photoluminescence (μ-PL) was used to charact...

The p-type AlGaN electron blocking layer (EBL) is widely used in InGaN/GaN light-emitting diodes (LEDs) for electron overflow suppression. However, a typical EBL also reduces the hole injection efficiency, because holes have to climb over the energy barrier generated at the p-AlGaN/p-GaN interface before entering the quantum wells. In this work, to address this problem, we report the enhancemen...

InGaN quantum dots (QDs) are promising candidates for GaN-based all-visible optoelectronic devices such as micro light-emitting diode and laser. In this study, self-assembled InGaN/GaN multi-quantum (MQDs) have been grown by plasma-assisted molecular beam epitaxy on c-plane GaN-on-sapphire template. A high density of over 3.8 × 1010 cm−2 is achieved QDs exhibit a relatively uniform size distrib...

We present the design of high-efficiency and flexible InGaN solar cells based on nano-pyramid absorbers, which allows for high indium incorporation reduced polarization effects while maintaining crystalline quality. The process uses nanoscale selective area growth van der Waals epitaxy two-dimensional (2D) hexagonal boron nitride sapphire substrates. 2D layer enables mechanical release via self...

This paper investigated the back-barrier (BB) effect for gallium nitride (GaN)-based high-electron-mobility transistors with an Fe-doped buffer and Fe-buffer + Indium (InGaN)-BB structure. The authors found that InGaN-BB structure was effective in reducing off-state leakage current compared to buffer. Secondary-ion-mass spectrometry measurements revealed segregated Fe existed peaks at ∼2 × 1017...

Xe SHI irradiation of InGaN/GaN MQWs leads to surface damage and intermixing at the interfaces. The introduced defects cause a strong quenching luminescence as well change in excitation mechanisms.