Presolar SiC grains of the types mainstream, Y, and Z are believed to have formed in thermally pulsing asymptotic giant branch stars with a range of metallicity: mainstream grains in stars of close-to-solar metallicity, Y grains in stars of around half-solar metallicty, and Z grains in stars of around one-third solar metallicity. From their Si and Ti isotopic ratios, it is possible to obtain in...

The epitaxy of high-power gallium nitride (GaN) light-emitting diode (LED) on amorphous silicon carbide (a-SixC(1-x)) buffer is demonstrated. The a-SixC(1-x) buffers with different nonstoichiometric C/Si composition ratios are synthesized on SiO2/Si substrate by using a low-temperature plasma enhanced chemical vapor deposition. The GaN LEDs on different SixC(1-x) buffers exhibit different EL an...

We study the temperature dependence of time-resolved photoluminescence (PL) in closely packed alignment of Si nanodisks (NDs) with SiC barriers, fabricated by neutral beam etching using bio-nano-templates. The PL time profile indicates three decaying components with different decay times. The PL intensities in the two slower decaying components depend strongly on temperature. These temperature ...

We fabricated hydrogenated amorphous silicon/polyaniline n–i–p heterojunction solar cells incorporating a doped, hole conducting polyaniline (PANI) layer. The cells were prepared by spin-casting differing polyaniline dispersions corresponding to film conductivities ranging from 10 2 to 10 S/m. The open-circuit voltages VOC of the cells ranged from 0.5–0.7 V. While these open-circuit voltages ar...

Micro-Raman and micro-transmission imaging experiments have been done on epitaxial graphene grown on the C- and Si-faces of on-axis 6H-SiC substrates. On the C-face it is shown that the SiC sublimation process results in the growth of long and isolated graphene ribbons (up to 600 μm) that are strain-relaxed and lightly p-type doped. In this case, combining the results of micro-Raman spectroscop...

The structural and electronic properties of twisted bilayer graphene (TBG) on SiC(000) grown by Si flux-assisted molecular beam epitaxy were investigated using scanning tunneling microscopy (STM) and angle-resolved photoelectron spectroscopy with nanometric spatial resolution. STM images revealed a wide distribution of twist angles between the two graphene layers. The electronic structure recor...

Graphene ranks highly as a possible material for future high-speed and flexible electronics. Current fabrication routes, which rely on metal substrates, require post-synthesis transfer of the graphene onto a Si wafer, or in the case of epitaxial growth on SiC, temperatures above 1000 degrees C are required. Both the handling difficulty and high temperatures are not best suited to present day si...

It is known that the single-modal Weibull model describes well the size effect of brittle fiber tensile strength. However, some ceramic fibers have been reported that single-modal Weibull model provided biased estimation on the gauge length dependence. A hypothesis on the bias is that the density of critical defects is very small, thus, fracture probability of small gauge length samples distrib...

An investigation of how electron/photon beam exposures affect the intercalation rate of Na deposited on graphene prepared on Si-face SiC is presented. Focused radiation from a storage ring is used for soft X-ray exposures while the electron beam in a low energy electron microscope is utilized for electron exposures. The microscopy and core level spectroscopy data presented clearly show that the...

Low-temperature (~1073 K) formation of graphene was performed on Si substrates by using an ultrathin (2 nm) Ni layer deposited on a 3C-SiC thin film heteroepitaxially grown on a Si substrate. Angle-resolved, synchrotron-radiation X-ray photoemission spectroscopy (SR-XPS) results show that the stacking order is, from the surface to the bulk, Ni carbides(Ni3C/NiCx)/graphene/Ni/Ni silicides (Ni2Si...