We revisit the field effect procedure used to characterise the slow dynamics of glassy Anderson insulators. It is shown that in the slowest systems the procedure fails and the “characteristic” time values extracted are not intrinsic but determined by the experimental procedure itself. In other cases (like lightly doped indium oxide) qualitative indications about the dynamics might be obtained, ...

In this study, the mobility enhancement in an Amorphous Oxide Semiconductor Thin Film Transistor (AOS TFT), particularly the effect of enhanced-mobility current path was investigated. In the TFT structure, the a-IGZO single active channel layer was replaced by double layers. Indium Tin Oxide (ITO) was employed as an enhanced-mobility current path material and was embedded in an amorphous Indium...

Copper nanowires have the potential to reach and even exceed the indium tin oxide performances as flexible transparent conductive electrodes. However, for a large-scale production, they need to be fabricated in a high-speed, low-cost way, without degrading the flexible substrate. One of the major bottlenecks resides in the post-treatment used to remove organic residues from the surface of the n...

A novel polymer-layer-free system for liquid-crystal alignment is demonstrated by various shaped indium tin oxide (ITO) patterns. Liquid crystals are aligned along the ITO line pattern and secondary sputtering lithography can change the shape of the ITO line pattern. Different shapes can control the direction and size of the pretilt angle. This effect eliminates defects and reduces the response...