SiC MOSFETs have already replace silicon-based device in power applications, even if some technological issues are still not solved. The most important of them is related to the complex traps distribution at SiC/SiO 2 interface. Interface affect overall behavior, modifying channel mobility and introducing hysteresis. In this work experimental C-V I-V curves carried out on various commercial MOS...

The process of ageing in rubbers requires monitoring over long periods (days to years). To do so in non-conducting rubbers, small amounts of carbon-black particles were dispersed in a fractal network through the rubber matrix, to make the rubber conducting without modifying its properties. Continuous monitoring of the resistance reveals the structural changes around the glass and melting transi...

This paper analyzes the design space stability of negative capacitance double gate junctionless FETs (NCDG JLFET). Using analytical expressions derived from a charge-based model, we predict instability condition, hysteresis voltage, and critical thickness ferroelectric layers giving rise to behavior. The impact technological parameters is investigated in order ensure hysteresis-free operation. ...

Hysteresis has been widely recognized in the soil water relationship. In this paper, a detailed review of hysteresis was performed in relation to its models. So far, different models have been suggested to describe hysteresis in the water retention curve (WRC) that could be categorized into two main groups: conceptual and empirical models. The models in the first group are based on the domain t...

Magnetic force microscope ~MFM! imaging in conjunction with longitudinal Kerr hysteresis loop measurements have been used to investigate the micromagnetic behavior of micron scale epitaxial ~110! bcc Fe thin-film elements ~50-nm thick! with rectangular, triangular, and needle-shaped ends and competing magnetic anisotropies. Thin-film elements of 2-mm width and 6-mm length and greater have been ...

We have demonstrated that photo-thin film transistors (photo-TFTs) fabricated via a simple defect-generating process could achieve fast recovery, a high signal to noise (S/N) ratio, and high sensitivity. The photo-TFTs are inverted-staggered bottom-gate type indium-gallium-zinc-oxide (IGZO) TFTs fabricated using atomic layer deposition (ALD)-derived Al2O3 gate insulators. The surfaces of the Al...

When pulled along its axis, double-stranded DNA elongates abruptly at a force of approximately 65 pN. Two physical pictures have been developed to describe this overstretched state. The first proposes that strong forces induce a phase transition to a molten state consisting of unhybridized single strands. The second picture introduces an elongated hybridized phase called S-DNA. Little thermodyn...

Position control of Shape Memory Alloy (SMA) actuators has been a challenging topic during the last years due to their nonlinearities in the governing physical equations as well as their hysteresis behaviors. Using the inverse of phenomenological hysteresis model in order to compensate the input–output hysteresis behavior of these actuators shows the effectiveness of this approach. In this pape...

Although the existence of multiple stable phenotypes of living organisms enables random switching between phenotypes as well as non-random history dependent switching called hysteresis, only random switching has been considered in prior experimental and theoretical models of adaptation to variable environments. This work considers the possibility that hysteresis may also evolve together with ra...

It has been found that the response of acupuncture point on the human meridian line exhibits nonlinear dynamic behavior when excitation of electroacupuncture is implemented on another meridian point. This nonlinear phenomenon is in fact a hysteretic phenomenon. In order to explore the characteristic of human meridian and finally find a way to improve the treatment of diseases via electro-acupun...